Growth mode of Ge films on Si(100) substrate deposited by ion beam sputtering

Engineering & Materials Science

• Ion beams 89%
• Sputtering 80%
• Sputter deposition 51%
• Substrates 44%
• Ions 19%
• Growth temperature 16%
• Silicon 16%
• Ultrahigh vacuum 16%
• Molecular beam epitaxy 16%
• Germanium 14%
• Spectrometry 13%
• Etching 11%
• Electrons 10%
• Thin films 9%
• Surface roughness 8%
• Scanning electron microscopy 8%
• Temperature 4%

Chemical Compounds

• Ion Beam Sputtering 100%
• Ion Beam 52%
• Sputter Deposition 44%
• Liquid Film 30%
• Interface Roughness 27%
• Molecular Beam Epitaxy 22%
• Etching 14%
• Vacuum 12%
• Ion 12%
• Surface 10%
• Scanning Electron Microscopy 9%
• Electron Particle 8%

Physics & Astronomy

• sputtering 49%
• ion beams 48%
• vacuum systems 10%
• silicon 9%
• ultrahigh vacuum 8%
• ions 8%
• bombardment 8%
• germanium 7%
• molecular beam epitaxy 7%
• roughness 7%
• incidence 7%
• etching 6%
• scanning electron microscopy 5%
• temperature 5%
• decay 5%
• spectroscopy 4%
• thin films 4%
• electrons 3%