General features of progressive breakdown in gate oxides: A compact model

Felix Palumbo, Moshe Eizenberg, Salvatore Lombardo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

11 Scopus citations

Abstract

We show and discuss some general features of dielectric breakdown of ultra-thin gate oxides for CMOS. We discuss III-V devices with high-k/metal gate, and compare to more classical structures with silicon substrates, SiOxNy or high-k as gate dielectrics, and poly-Si or metal gate. A model of the breakdown growth dependence on voltage, temperature, oxide thickness, etc., is discussed and compared to data.

Original languageEnglish
Title of host publication2015 IEEE International Reliability Physics Symposium, IRPS 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages5A11-5A16
ISBN (Electronic)9781467373623
DOIs
StatePublished - 26 May 2015
Externally publishedYes
EventIEEE International Reliability Physics Symposium, IRPS 2015 - Monterey, United States
Duration: 19 Apr 201523 Apr 2015

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2015-May
ISSN (Print)1541-7026

Conference

ConferenceIEEE International Reliability Physics Symposium, IRPS 2015
CountryUnited States
CityMonterey
Period19/04/1523/04/15

Keywords

  • electromigration
  • III-V MOS devices
  • oxide breakdown
  • progressive breakdown

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