Gated van der Pauw measurements: A powerful tool for probing electron trapping effects in GaN HEMTs

Shlomo Mehari, Arkady Gavrilov, Moshe Eizenberg, Dan Ritter

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Gated van der Pauw structures can be used to distinguish between different trapping effects in AlGaN/GaN HEMT layers, and evaluate trap density. Activation energies can also be obtained [2]. The absence of transistor access region effects greatly simplifies the interpretation of the data compared to transistor pulsed I-V experiments.

Original languageEnglish
Title of host publication73rd Annual Device Research Conference, DRC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages125-126
Number of pages2
ISBN (Electronic)9781467381345
DOIs
StatePublished - 3 Aug 2015
Externally publishedYes
Event73rd Annual Device Research Conference, DRC 2015 - Columbus, United States
Duration: 21 Jun 201524 Jun 2015

Publication series

NameDevice Research Conference - Conference Digest, DRC
Volume2015-August
ISSN (Print)1548-3770

Conference

Conference73rd Annual Device Research Conference, DRC 2015
CountryUnited States
CityColumbus
Period21/06/1524/06/15

Keywords

  • Aluminum gallium nitride
  • Charge carrier processes
  • Gallium nitride
  • HEMTs
  • Logic gates
  • MODFETs
  • Transient analysis

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