In this paper, Fourier-transform infrared (FTIR) spectroscopy and ellipsometric spectroscopy were used to characterize the optical properties of atomic layer-deposited (ALD) ultra-thin TaN films on a Si(1 0 0) single crystal. The analysis of FTIR spectra indicates that the incorporated impurities are in the form of radicals of NHx, CHx and OHx. SiHx is also detected due to interfacial reactions between NHx and the Si substrate native oxide. These H-containing radicals can be removed by post-annealing the samples. The vibration of Ta-N bonding is at the wavenumber of 1190 cm-1, which is independent of the film thickness and post-annealing temperature. The results of ellipsometric spectra show that the band gaps are 3.28 eV, 2.65 eV and 2.50 eV as the films thicknesses are 1 nm, 5 nm and 10 nm, respectively. A slight red-shift of the band gap takes place after annealing the ultra-thin films. The mechanisms of the film optical properties were analyzed in the paper.
- Atomic layer deposition
- Tantalum nitride