Formation of shallow Schottky contacts to Si using Pt-Si and Pd-Si alloy films

M. Eizenberg*, H. Foell, K. N. Tu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

34 Scopus citations

Abstract

A series of codeposited alloy films of Pt-Si with a composition changing from Pt75Si25 to Pt50Si50 and of Pd-Si changing from Pd75Si25 to Pd67Si 33 have been prepared on Si for a systematic study of shallow silicide contacts. The effects of alloy composition and heat treatment on the formation and properties of these contacts have been investigated by I-V measurement of Schottky barrier height, glancing incidence x-ray diffraction, and cross-sectional transmission electron microscopy. Shallow contacts with a depth of about 10 nm and with the Schottky barrier height of PtSi and Pd 2Si have been achieved.

Original languageEnglish
Pages (from-to)861-868
Number of pages8
JournalJournal of Applied Physics
Volume52
Issue number2
DOIs
StatePublished - 1981
Externally publishedYes

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