Formation of compositionally uniform tungsten silicide films using dichlorosilane in a single-wafer reactor

S. G. Telford*, M. Eizenberg, M. Chang, A. K. Sinha, T. R. Gow

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

High quality chemical vapor deposited (CVD) WSix (2.2<x<2.6) films were deposited on 200 mm Si wafers using SiH 2Cl2/WF6 chemistry. Earlier reported problems regarding silicide nucleation at the substrate interface were solved resulting in a highly uniform composition (vertically and laterally) regardless of the substrate type (SiO2 or polycrystalline Si). As-deposited resistivities of ∼750 μΩ cm were obtained for WSix (x=2.4-2.5) films grown at 550-600°C. The films were completely crystalline, consisting predominantly of the hexagonal WSi2 phase. The as-deposited stress in the films was ∼1.3×1010 dyne/cm 2 and after 900°C anneal has reduced to ∼8×10 9 dyne/cm2. The films contained relatively low levels of impurities: F∼6×1016-2×1017 atoms/cm 3, and Cl∼5×1017-5×1018 atoms/cm3.

Original languageEnglish
Pages (from-to)1766-1768
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number15
DOIs
StatePublished - 1993

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