Formation of compositionally uniform tungsten silicide films using dichlorosilane in a single-wafer reactor

S. G. Telford; M. Eizenberg; M. Chang; A. K. Sinha; T. R. Gow

doi:10.1063/1.109568

Formation of compositionally uniform tungsten silicide films using dichlorosilane in a single-wafer reactor

S. G. Telford^*, M. Eizenberg, M. Chang, A. K. Sinha, T. R. Gow

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

High quality chemical vapor deposited (CVD) WSi_x (2.2<x<2.6) films were deposited on 200 mm Si wafers using SiH ₂Cl₂/WF₆ chemistry. Earlier reported problems regarding silicide nucleation at the substrate interface were solved resulting in a highly uniform composition (vertically and laterally) regardless of the substrate type (SiO₂ or polycrystalline Si). As-deposited resistivities of ∼750 μΩ cm were obtained for WSi_x (x=2.4-2.5) films grown at 550-600°C. The films were completely crystalline, consisting predominantly of the hexagonal WSi₂ phase. The as-deposited stress in the films was ∼1.3×10¹⁰ dyne/cm ² and after 900°C anneal has reduced to ∼8×10 ⁹ dyne/cm². The films contained relatively low levels of impurities: F∼6×10¹⁶-2×10¹⁷ atoms/cm ³, and Cl∼5×10¹⁷-5×10¹⁸ atoms/cm³.

Original language	English
Pages (from-to)	1766-1768
Number of pages	3
Journal	Applied Physics Letters
Volume	62
Issue number	15
DOIs	https://doi.org/10.1063/1.109568
State	Published - 1993
Externally published	Yes

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title = "Formation of compositionally uniform tungsten silicide films using dichlorosilane in a single-wafer reactor",

abstract = "High quality chemical vapor deposited (CVD) WSix (2.22Cl2/WF6 chemistry. Earlier reported problems regarding silicide nucleation at the substrate interface were solved resulting in a highly uniform composition (vertically and laterally) regardless of the substrate type (SiO2 or polycrystalline Si). As-deposited resistivities of ∼750 μΩ cm were obtained for WSix (x=2.4-2.5) films grown at 550-600°C. The films were completely crystalline, consisting predominantly of the hexagonal WSi2 phase. The as-deposited stress in the films was ∼1.3×1010 dyne/cm 2 and after 900°C anneal has reduced to ∼8×10 9 dyne/cm2. The films contained relatively low levels of impurities: F∼6×1016-2×1017 atoms/cm 3, and Cl∼5×1017-5×1018 atoms/cm3.",

author = "Telford, {S. G.} and M. Eizenberg and M. Chang and Sinha, {A. K.} and Gow, {T. R.}",

year = "1993",

doi = "10.1063/1.109568",

language = "英语",

volume = "62",

pages = "1766--1768",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Formation of compositionally uniform tungsten silicide films using dichlorosilane in a single-wafer reactor

AU - Telford, S. G.

AU - Eizenberg, M.

AU - Chang, M.

AU - Sinha, A. K.

AU - Gow, T. R.

PY - 1993

Y1 - 1993

N2 - High quality chemical vapor deposited (CVD) WSix (2.22Cl2/WF6 chemistry. Earlier reported problems regarding silicide nucleation at the substrate interface were solved resulting in a highly uniform composition (vertically and laterally) regardless of the substrate type (SiO2 or polycrystalline Si). As-deposited resistivities of ∼750 μΩ cm were obtained for WSix (x=2.4-2.5) films grown at 550-600°C. The films were completely crystalline, consisting predominantly of the hexagonal WSi2 phase. The as-deposited stress in the films was ∼1.3×1010 dyne/cm 2 and after 900°C anneal has reduced to ∼8×10 9 dyne/cm2. The films contained relatively low levels of impurities: F∼6×1016-2×1017 atoms/cm 3, and Cl∼5×1017-5×1018 atoms/cm3.

AB - High quality chemical vapor deposited (CVD) WSix (2.22Cl2/WF6 chemistry. Earlier reported problems regarding silicide nucleation at the substrate interface were solved resulting in a highly uniform composition (vertically and laterally) regardless of the substrate type (SiO2 or polycrystalline Si). As-deposited resistivities of ∼750 μΩ cm were obtained for WSix (x=2.4-2.5) films grown at 550-600°C. The films were completely crystalline, consisting predominantly of the hexagonal WSi2 phase. The as-deposited stress in the films was ∼1.3×1010 dyne/cm 2 and after 900°C anneal has reduced to ∼8×10 9 dyne/cm2. The films contained relatively low levels of impurities: F∼6×1016-2×1017 atoms/cm 3, and Cl∼5×1017-5×1018 atoms/cm3.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Formation of compositionally uniform tungsten silicide films using dichlorosilane in a single-wafer reactor

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