Ferroelectricity of as-deposited HZO fabricated by plasma-enhanced atomic layer deposition at 300 °C by inserting TiO₂interlayers

TY - JOUR

T1 - Ferroelectricity of as-deposited HZO fabricated by plasma-enhanced atomic layer deposition at 300 °C by inserting TiO2interlayers

AU - Qi, Yuanshen

AU - Xu, Xianbin

AU - Krylov, Igor

AU - Eizenberg, Moshe

N1 - Publisher Copyright: © 2021 Author(s). Copyright: Copyright 2021 Elsevier B.V., All rights reserved.

PY - 2021/1/18

Y1 - 2021/1/18

N2 - We report the observation of ferroelectricity in hafnium-zirconium-oxide thin films in the as-deposited state, namely, after deposition at a low temperature of 300 °C without post-metallization annealing. The Hf0.5Zr0.5O2 (HZO) thin film was interposed between two TiO2 interlayers, and all films were produced by plasma enhanced atomic layer deposition and integrated into a TiN-based metal-insulator-metal capacitor. The ferroelectric nature of the as-deposited HZO film was evaluated by a polarization-voltage hysteresis loop, and a 2Pr value of ∼7.4 μC/cm2 was achieved. Grazing incidence x-ray diffraction measurements and atomic-resolution scanning transmission electron microscopy characterization revealed the co-existence of fully crystallized polar orthorhombic and monoclinic phases of the dielectric in the as-deposited sample. We concluded that the nucleation and growth of the crystalline polar non-centrosymmetric orthorhombic phases in the 10 nm HZO thin film were prompted by the available energy from the plasma and the tensile lattice mismatch strain provided by the TiO2 interlayer.

AB - We report the observation of ferroelectricity in hafnium-zirconium-oxide thin films in the as-deposited state, namely, after deposition at a low temperature of 300 °C without post-metallization annealing. The Hf0.5Zr0.5O2 (HZO) thin film was interposed between two TiO2 interlayers, and all films were produced by plasma enhanced atomic layer deposition and integrated into a TiN-based metal-insulator-metal capacitor. The ferroelectric nature of the as-deposited HZO film was evaluated by a polarization-voltage hysteresis loop, and a 2Pr value of ∼7.4 μC/cm2 was achieved. Grazing incidence x-ray diffraction measurements and atomic-resolution scanning transmission electron microscopy characterization revealed the co-existence of fully crystallized polar orthorhombic and monoclinic phases of the dielectric in the as-deposited sample. We concluded that the nucleation and growth of the crystalline polar non-centrosymmetric orthorhombic phases in the 10 nm HZO thin film were prompted by the available energy from the plasma and the tensile lattice mismatch strain provided by the TiO2 interlayer.

UR - http://www.scopus.com/inward/record.url?scp=85099787599&partnerID=8YFLogxK

U2 - 10.1063/5.0037887

DO - 10.1063/5.0037887

M3 - 文章

AN - SCOPUS:85099787599

SN - 0003-6951

VL - 118

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 032906

ER -