Fermi level tuning using the Hf-Ni alloy system as a gate electrode in metal-oxide-semiconductor devices

Jonathan Avner Rothschild^*, Aya Cohen, Anna Brusilovsky, Lior Kornblum, Yaron Kauffmann, Yaron Amouyal, Moshe Eizenberg

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review