CVD Al deposited on a TiN/Ti liner followed by `warm' PVD Al (Cu) is a promising approach for filling high aspect ratio vias. A highly (111) textured finn is important to achieve high electromigration resistivity. The dependence of the Al orientation on the type of the underlying TiN liner and the mechanism responsible for this effect were investigated. HRTEM was used to characterize the structure of the Al grains (after 1 s of deposition), through to a continuous film, as well as the structure of the interface of thick Al films with TiN. The microscopy results helped to explain the X-ray diffraction observations that on PVD TiN the Al film had a stronger (111) texture than on other TiN types. This is attributed to it topotaxial relationship, which forms during the nucleation stage of the CVD Al.
|Number of pages
|Published - Jun 1999
|Proceedings of the 1998 European Materials Research Society Meeting. Symposium N: Materials and Processes for Submicron Technologies / E-MRS Spring Meeting - Strasbourg
Duration: 16 Jun 1998 → 19 Jun 1998