Experimental evidence for the correlation between the weak inversion hump and near midgap states in dielectric/InGaAs interfaces

Igor Krylov*, Lior Kornblum, Arkady Gavrilov, Dan Ritter, Moshe Eizenberg

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

44 Scopus citations

Abstract

Temperature dependent capacitance-voltage (C-V) and conductance-voltage (G-V) measurements were performed to obtain activation energies (E A) for weak inversion C-V humps and parallel conductance peaks in Al 2O 3/InGaAs and Si 3N 4/InGaAs gate stacks. Values of 0.48 eV (slightly more than half of the band gap of the studied In 0.53Ga 0.47As) were obtained for E A of both phenomena for both gate dielectrics studied. This indicates an universal InGaAs behavior and shows that both phenomena are due to generation- recombination of minority carriers through near midgap located interface states. The C-V hump correlates with the interface states density (D it) and can be used as a characterization tool for dielectric/InGaAs systems.

Original languageEnglish
Article number173508
JournalApplied Physics Letters
Volume100
Issue number17
DOIs
StatePublished - 23 Apr 2012
Externally publishedYes

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