Eutectic melting by pulsed ion beam irradiation

R. Fastow; J. W. Mayer; T. Brat; M. Eizenberg; J. O. Olowolafe

doi:10.1063/1.95756

Eutectic melting by pulsed ion beam irradiation

R. Fastow^*, J. W. Mayer, T. Brat, M. Eizenberg, J. O. Olowolafe

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Interfacial melting at near eutectic compositions has been observed for three metal-silicon systems using pulsed ion beam irradiation. In all cases (Ni/Si, Co/Si, and Pt/Si), the reaction occurred below the melting temperature of either the deposited metal layer or the silicon substrate. Compositional steps in the reacted Ni/Si, Co/Si, and Pt/Si films were measured using Rutherford backscattering spectroscopy. These steps had the near eutectic compositions of Ni_0.5Si_0.5, Co_0.73Si _0.27, and Pt_0.77Si_0.23, respectively. The Ni/Si sample was examined using planar and cross-sectional transmission electron microscopy. It was found that the reacted layer, composed of polycrystalline NiSi and Ni₂Si, formed a sharp interface with the silicon.

Original language	English
Pages (from-to)	1052-1054
Number of pages	3
Journal	Applied Physics Letters
Volume	46
Issue number	11
DOIs	https://doi.org/10.1063/1.95756
State	Published - 1985
Externally published	Yes

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title = "Eutectic melting by pulsed ion beam irradiation",

abstract = "Interfacial melting at near eutectic compositions has been observed for three metal-silicon systems using pulsed ion beam irradiation. In all cases (Ni/Si, Co/Si, and Pt/Si), the reaction occurred below the melting temperature of either the deposited metal layer or the silicon substrate. Compositional steps in the reacted Ni/Si, Co/Si, and Pt/Si films were measured using Rutherford backscattering spectroscopy. These steps had the near eutectic compositions of Ni0.5Si0.5, Co0.73Si 0.27, and Pt0.77Si0.23, respectively. The Ni/Si sample was examined using planar and cross-sectional transmission electron microscopy. It was found that the reacted layer, composed of polycrystalline NiSi and Ni2Si, formed a sharp interface with the silicon.",

author = "R. Fastow and Mayer, {J. W.} and T. Brat and M. Eizenberg and Olowolafe, {J. O.}",

year = "1985",

doi = "10.1063/1.95756",

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T1 - Eutectic melting by pulsed ion beam irradiation

AU - Fastow, R.

AU - Mayer, J. W.

AU - Brat, T.

AU - Eizenberg, M.

AU - Olowolafe, J. O.

PY - 1985

Y1 - 1985

N2 - Interfacial melting at near eutectic compositions has been observed for three metal-silicon systems using pulsed ion beam irradiation. In all cases (Ni/Si, Co/Si, and Pt/Si), the reaction occurred below the melting temperature of either the deposited metal layer or the silicon substrate. Compositional steps in the reacted Ni/Si, Co/Si, and Pt/Si films were measured using Rutherford backscattering spectroscopy. These steps had the near eutectic compositions of Ni0.5Si0.5, Co0.73Si 0.27, and Pt0.77Si0.23, respectively. The Ni/Si sample was examined using planar and cross-sectional transmission electron microscopy. It was found that the reacted layer, composed of polycrystalline NiSi and Ni2Si, formed a sharp interface with the silicon.

AB - Interfacial melting at near eutectic compositions has been observed for three metal-silicon systems using pulsed ion beam irradiation. In all cases (Ni/Si, Co/Si, and Pt/Si), the reaction occurred below the melting temperature of either the deposited metal layer or the silicon substrate. Compositional steps in the reacted Ni/Si, Co/Si, and Pt/Si films were measured using Rutherford backscattering spectroscopy. These steps had the near eutectic compositions of Ni0.5Si0.5, Co0.73Si 0.27, and Pt0.77Si0.23, respectively. The Ni/Si sample was examined using planar and cross-sectional transmission electron microscopy. It was found that the reacted layer, composed of polycrystalline NiSi and Ni2Si, formed a sharp interface with the silicon.

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DO - 10.1063/1.95756

M3 - 文章

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Eutectic melting by pulsed ion beam irradiation

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