TY - JOUR
T1 - Eutectic melting by pulsed ion beam irradiation
AU - Fastow, R.
AU - Mayer, J. W.
AU - Brat, T.
AU - Eizenberg, M.
AU - Olowolafe, J. O.
N1 - Copyright:
Copyright 2007 Elsevier B.V., All rights reserved.
PY - 1985
Y1 - 1985
N2 - Interfacial melting at near eutectic compositions has been observed for three metal-silicon systems using pulsed ion beam irradiation. In all cases (Ni/Si, Co/Si, and Pt/Si), the reaction occurred below the melting temperature of either the deposited metal layer or the silicon substrate. Compositional steps in the reacted Ni/Si, Co/Si, and Pt/Si films were measured using Rutherford backscattering spectroscopy. These steps had the near eutectic compositions of Ni0.5Si0.5, Co0.73Si 0.27, and Pt0.77Si0.23, respectively. The Ni/Si sample was examined using planar and cross-sectional transmission electron microscopy. It was found that the reacted layer, composed of polycrystalline NiSi and Ni2Si, formed a sharp interface with the silicon.
AB - Interfacial melting at near eutectic compositions has been observed for three metal-silicon systems using pulsed ion beam irradiation. In all cases (Ni/Si, Co/Si, and Pt/Si), the reaction occurred below the melting temperature of either the deposited metal layer or the silicon substrate. Compositional steps in the reacted Ni/Si, Co/Si, and Pt/Si films were measured using Rutherford backscattering spectroscopy. These steps had the near eutectic compositions of Ni0.5Si0.5, Co0.73Si 0.27, and Pt0.77Si0.23, respectively. The Ni/Si sample was examined using planar and cross-sectional transmission electron microscopy. It was found that the reacted layer, composed of polycrystalline NiSi and Ni2Si, formed a sharp interface with the silicon.
UR - http://www.scopus.com/inward/record.url?scp=36549096439&partnerID=8YFLogxK
U2 - 10.1063/1.95756
DO - 10.1063/1.95756
M3 - 文章
AN - SCOPUS:36549096439
VL - 46
SP - 1052
EP - 1054
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 11
ER -