The properties of thin (350 angstrom) Ti layers deposited on Si0.89Ge0.11 layers epitaxially grown on Si(001) were studied as a function of isochronal (30 min.) thermal treatments in the temperature range Ta = 550-800°C. Both as-deposited and annealed at Ta up to 750°C Schottky diodes revealed near-ideal I-V and C-V characteristics with the same flat-band barrier height Φb0=0.60±0.01 eV. The results indicate that at these Ta the Fermi level is pinned with respect to the conduction band. Annealing at 800°C resulted in an improvement of the Schottky diodes quality and a drop in Φb0 and the series resistance Rs of the contacts. The values of the ideality factor n and Φb0 measured were 1.03±0.02 and 0.56±0.007 eV, correspondingly. The electrical parameters of these metal/semiconductor contacts were correlated with the dynamics of interfacial reactions due to the applied heat-treatments.