Effects of Na doping on the distribution of elements and the formation of back surface field in CIGS absorption layer

Zhixiang Si; Qi Yuan; Spark Wang; Dongying Li; Ruijiang Hong; Junfeng Han; Limei Cha

doi:10.1007/s00339-022-06117-4

Effects of Na doping on the distribution of elements and the formation of back surface field in CIGS absorption layer

Zhixiang Si, Qi Yuan, Spark Wang, Dongying Li, Ruijiang Hong^*, Junfeng Han^*, Limei Cha^*

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article

2 Scopus citations

Abstract

In this research, the influences of Na doping content on the microstructure of CIGS absorption layer and the electrical performance of CIGS solar cell are investigated. It is found that Na is benefit to reducing the thickness of MoSe2 layer which is between the CIGS absorption layer and Mo back contact layer, and decreasing the series resistance and improving the fill-factor of the cell. Besides, Na will influence the distribution of Ga. With the increase of the Na doping, Ga elements tend to accumulate at the back region of the CIGS absorption layer, and form a strong back surface field which reduces the carriers recombination. Those effects contribute to the improvement of the CIGS cells efficiency.

Original language	English
Journal	Applied Physics A: Materials Science and Processing
DOIs	https://doi.org/10.1007/s00339-022-06117-4
State	Published - 22 Oct 2022

Keywords

CuInGaSe
Thin-film solar cell
Na doping
Back surface filed
Electrical performance

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10.1007/s00339-022-06117-4

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title = "Effects of Na doping on the distribution of elements and the formation of back surface field in CIGS absorption layer",

abstract = "In this research, the influences of Na doping content on the microstructure of CIGS absorption layer and the electrical performance of CIGS solar cell are investigated. It is found that Na is benefit to reducing the thickness of MoSe2 layer which is between the CIGS absorption layer and Mo back contact layer, and decreasing the series resistance and improving the fill-factor of the cell. Besides, Na will influence the distribution of Ga. With the increase of the Na doping, Ga elements tend to accumulate at the back region of the CIGS absorption layer, and form a strong back surface field which reduces the carriers recombination. Those effects contribute to the improvement of the CIGS cells efficiency.",

keywords = "CuInGaSe, Thin-film solar cell, Na doping, Back surface filed, Electrical performance",

author = "Zhixiang Si and Qi Yuan and Spark Wang and Dongying Li and Ruijiang Hong and Junfeng Han and Limei Cha",

year = "2022",

month = oct,

day = "22",

doi = "10.1007/s00339-022-06117-4",

language = "英语",

journal = "Applied Physics A: Materials Science and Processing",

issn = "0947-8396",

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TY - JOUR

T1 - Effects of Na doping on the distribution of elements and the formation of back surface field in CIGS absorption layer

AU - Si, Zhixiang

AU - Yuan, Qi

AU - Wang, Spark

AU - Li, Dongying

AU - Hong, Ruijiang

AU - Han, Junfeng

AU - Cha, Limei

PY - 2022/10/22

Y1 - 2022/10/22

N2 - In this research, the influences of Na doping content on the microstructure of CIGS absorption layer and the electrical performance of CIGS solar cell are investigated. It is found that Na is benefit to reducing the thickness of MoSe2 layer which is between the CIGS absorption layer and Mo back contact layer, and decreasing the series resistance and improving the fill-factor of the cell. Besides, Na will influence the distribution of Ga. With the increase of the Na doping, Ga elements tend to accumulate at the back region of the CIGS absorption layer, and form a strong back surface field which reduces the carriers recombination. Those effects contribute to the improvement of the CIGS cells efficiency.

AB - In this research, the influences of Na doping content on the microstructure of CIGS absorption layer and the electrical performance of CIGS solar cell are investigated. It is found that Na is benefit to reducing the thickness of MoSe2 layer which is between the CIGS absorption layer and Mo back contact layer, and decreasing the series resistance and improving the fill-factor of the cell. Besides, Na will influence the distribution of Ga. With the increase of the Na doping, Ga elements tend to accumulate at the back region of the CIGS absorption layer, and form a strong back surface field which reduces the carriers recombination. Those effects contribute to the improvement of the CIGS cells efficiency.

KW - CuInGaSe

KW - Thin-film solar cell

KW - Na doping

KW - Back surface filed

KW - Electrical performance

U2 - 10.1007/s00339-022-06117-4

DO - 10.1007/s00339-022-06117-4

M3 - 文章

SN - 0947-8396

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

ER -

Effects of Na doping on the distribution of elements and the formation of back surface field in CIGS absorption layer

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Keywords

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