Effect of oxide structure on the Fermi-level pinning at metal/ Gd 2 O3 interfaces

E. Lipp*, M. Eizenberg, M. Czernohorsky, H. J. Osten

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

The extent of Fermi-level pinning at metal/ Gd2 O3 interfaces is studied as a function of oxide structure by comparing the flatband voltage of Ta- and Pt-gated capacitors. The flatband voltage shift between the two metals, which equals the difference in effective work functions, was found to be largest when the oxide is single crystalline (1.30±0.05 V), while lower values are measured when the oxide is domain structured (1.05±0.05 V) or amorphous (0.80±0.05 V). These results indicate that long-range ordering has a dominant effect on Fermi-level pinning at metal/high- k interfaces.

Original languageEnglish
Article number193513
JournalApplied Physics Letters
Volume93
Issue number19
DOIs
StatePublished - 2008

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