Effect of hydrogen on the chemical bonding and band structure at the Al 2O 3/In 0.53Ga 0.47As interface

Pini Shekhter*, Lior Kornblum, Zuoguang Liu, Sharon Cui, T. P. Ma, Moshe Eizenberg

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Surface passivation of high mobility semiconductors such as InGaAs is a crucial bottleneck towards their integration in metal-oxide-semiconductor devices. The chemical structure and band offsets of InGaAs-Al 2O 3 with different passivations were investigated by x-ray photoelectron spectroscopy. Pre-deposition forming gas plasma treatment is shown to significantly improve the chemistry of S-passivated InGaAs surface, on which the Al 2O 3 is deposited by the molecular atomic deposition technique. Moreover, the change in the surface chemistry was found to correlate with a difference of 0.8 eV in the band offsets at the interface. This may offer insights on Fermi level pinning in such systems.

Original languageEnglish
Article number232103
JournalApplied Physics Letters
Volume99
Issue number23
DOIs
StatePublished - 5 Dec 2011
Externally publishedYes

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