Abstract
We report that depositing Al2O3 on InGaAs in an H-containing ambient (e.g., in forming gas) results in significant reduction of interface-trap density and significantly suppressed frequency dispersion of accumulation capacitance. The results of the inelastic electron tunneling spectroscopy study reveal that strong trap features at the Al2O 3/InGaAs interface in the InGaAs band gap are largely removed by depositing Al2O3 in an H-containing ambient. Transmission electron microscopy images and x-ray photoelectron spectroscopy data shed some light on the role of hydrogen in improving interface properties of the Al 2O3/In0.53Ga0.47As gate stack.
Original language | English |
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Article number | 222104 |
Journal | Applied Physics Letters |
Volume | 99 |
Issue number | 22 |
DOIs | |
State | Published - 28 Nov 2011 |
Externally published | Yes |