Direct observation of both contact and remote oxygen scavenging of GeO2 in a metal-oxide-semiconductor stack

S. Fadida; P. Shekhter; D. Cvetko; L. Floreano; A. Verdini; L. Nyns; S. Van Elshocht; I. Kymissis; M. Eizenberg

doi:10.1063/1.4898645

Direct observation of both contact and remote oxygen scavenging of GeO₂ in a metal-oxide-semiconductor stack

S. Fadida^*, P. Shekhter, D. Cvetko, L. Floreano, A. Verdini, L. Nyns, S. Van Elshocht, I. Kymissis, M. Eizenberg

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

In the path to incorporating Ge based metal-oxide-semiconductor into modern nano-electronics, one of the main issues is the oxide-semiconductor interface quality. Here, the reactivity of Ti on Ge stacks and the scavenging effect of Ti were studied using synchrotron X-ray photoelectron spectroscopy measurements, with an in-situ metal deposition and high resolution transmission electron microscopy imaging. Oxygen removal from the Ge surface was observed both in direct contact as well as remotely through an Al₂O₃ layer. The scavenging effect was studied in situ at room temperature and after annealing. We find that the reactivity of Ti can be utilized for improved scaling of Ge based devices.

Original language	English
Article number	164101
Journal	Journal of Applied Physics
Volume	116
Issue number	16
DOIs	https://doi.org/10.1063/1.4898645
State	Published - 28 Oct 2014
Externally published	Yes

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title = "Direct observation of both contact and remote oxygen scavenging of GeO2 in a metal-oxide-semiconductor stack",

abstract = "In the path to incorporating Ge based metal-oxide-semiconductor into modern nano-electronics, one of the main issues is the oxide-semiconductor interface quality. Here, the reactivity of Ti on Ge stacks and the scavenging effect of Ti were studied using synchrotron X-ray photoelectron spectroscopy measurements, with an in-situ metal deposition and high resolution transmission electron microscopy imaging. Oxygen removal from the Ge surface was observed both in direct contact as well as remotely through an Al2O3 layer. The scavenging effect was studied in situ at room temperature and after annealing. We find that the reactivity of Ti can be utilized for improved scaling of Ge based devices.",

author = "S. Fadida and P. Shekhter and D. Cvetko and L. Floreano and A. Verdini and L. Nyns and {Van Elshocht}, S. and I. Kymissis and M. Eizenberg",

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year = "2014",

month = oct,

day = "28",

doi = "10.1063/1.4898645",

language = "英语",

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T1 - Direct observation of both contact and remote oxygen scavenging of GeO2 in a metal-oxide-semiconductor stack

AU - Fadida, S.

AU - Shekhter, P.

AU - Cvetko, D.

AU - Floreano, L.

AU - Verdini, A.

AU - Nyns, L.

AU - Van Elshocht, S.

AU - Kymissis, I.

AU - Eizenberg, M.

PY - 2014/10/28

Y1 - 2014/10/28

N2 - In the path to incorporating Ge based metal-oxide-semiconductor into modern nano-electronics, one of the main issues is the oxide-semiconductor interface quality. Here, the reactivity of Ti on Ge stacks and the scavenging effect of Ti were studied using synchrotron X-ray photoelectron spectroscopy measurements, with an in-situ metal deposition and high resolution transmission electron microscopy imaging. Oxygen removal from the Ge surface was observed both in direct contact as well as remotely through an Al2O3 layer. The scavenging effect was studied in situ at room temperature and after annealing. We find that the reactivity of Ti can be utilized for improved scaling of Ge based devices.

AB - In the path to incorporating Ge based metal-oxide-semiconductor into modern nano-electronics, one of the main issues is the oxide-semiconductor interface quality. Here, the reactivity of Ti on Ge stacks and the scavenging effect of Ti were studied using synchrotron X-ray photoelectron spectroscopy measurements, with an in-situ metal deposition and high resolution transmission electron microscopy imaging. Oxygen removal from the Ge surface was observed both in direct contact as well as remotely through an Al2O3 layer. The scavenging effect was studied in situ at room temperature and after annealing. We find that the reactivity of Ti can be utilized for improved scaling of Ge based devices.

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U2 - 10.1063/1.4898645

DO - 10.1063/1.4898645

M3 - 文章

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SN - 0021-8979

VL - 116

JO - Journal of Applied Physics

JF - Journal of Applied Physics

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ER -

Direct observation of both contact and remote oxygen scavenging of GeO₂ in a metal-oxide-semiconductor stack

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