Direct observation of both contact and remote oxygen scavenging of GeO2 in a metal-oxide-semiconductor stack

S. Fadida*, P. Shekhter, D. Cvetko, L. Floreano, A. Verdini, L. Nyns, S. Van Elshocht, I. Kymissis, M. Eizenberg

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


In the path to incorporating Ge based metal-oxide-semiconductor into modern nano-electronics, one of the main issues is the oxide-semiconductor interface quality. Here, the reactivity of Ti on Ge stacks and the scavenging effect of Ti were studied using synchrotron X-ray photoelectron spectroscopy measurements, with an in-situ metal deposition and high resolution transmission electron microscopy imaging. Oxygen removal from the Ge surface was observed both in direct contact as well as remotely through an Al2O3 layer. The scavenging effect was studied in situ at room temperature and after annealing. We find that the reactivity of Ti can be utilized for improved scaling of Ge based devices.

Original languageEnglish
Article number164101
JournalJournal of Applied Physics
Issue number16
StatePublished - 2014
Externally publishedYes

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