M. Eizenberg*, J. W. Mayer, K. N. Tu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


Platinum silicide forms a high barrier height Schottky barrier diode to silicon, and aluminum is used as a low resistance metallization. During conventional heat treatment (sintering) of the Al/PtSi/Si structure at temperatures around 450 degree C, penetration of Al into PtSi occurs and, after a longer time, Al can penetrate into the interface between PtSi and Si. This reduces the barrier height. In order to overcome this problem, diffusion barriers, such as TiW, CrO//x, or TiN//x, are deposited between the PtSi layer and the Al layer.

Original languageEnglish
Pages (from-to)3708-3709
Number of pages2
JournalIBM technical disclosure bulletin
Issue number7 A
StatePublished - Dec 1984
Externally publishedYes

Fingerprint Dive into the research topics of 'DIFFUSION BARRIER FOR PtSi/Si STRUCTURES.'. Together they form a unique fingerprint.

Cite this