DIFFUSION BARRIER FOR PtSi/Si STRUCTURES.

M. Eizenberg*, J. W. Mayer, K. N. Tu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Platinum silicide forms a high barrier height Schottky barrier diode to silicon, and aluminum is used as a low resistance metallization. During conventional heat treatment (sintering) of the Al/PtSi/Si structure at temperatures around 450 degree C, penetration of Al into PtSi occurs and, after a longer time, Al can penetrate into the interface between PtSi and Si. This reduces the barrier height. In order to overcome this problem, diffusion barriers, such as TiW, CrO//x, or TiN//x, are deposited between the PtSi layer and the Al layer.

Original languageEnglish
Pages (from-to)3708-3709
Number of pages2
JournalIBM technical disclosure bulletin
Volume27
Issue number7 A
StatePublished - Dec 1984
Externally publishedYes

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