Dielectric property-microstructure relationship for nanoporous silica based thin films

I. Fisher; W. D. Kaplan; M. Eizenberg

doi:10.1063/1.1699491

Dielectric property-microstructure relationship for nanoporous silica based thin films

I. Fisher^*, W. D. Kaplan, M. Eizenberg

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

The correlation of microstructure and dielectric properties of different silica based thin films was studied. The Rutherford backscattering, x-ray reflectivity and ellipsometry measurements show that the spin-on deposition (SOD) films have a higher porosity than plasma enhanced chemical vapor deposition (PECVD) and chemical vapor deposition (CVD) films. The results show that the formation of air voids lowers the dielectric constant of the inhomogeneous two phase nanoporous silica based films deposited by SOD. It also show the existence of a homogeneous low density loose microstructure originating from a bonding nature in the PECVD/CVD films which leads to lowering of their dielectric constants to a small extent.

Original language	English
Pages (from-to)	5762-5767
Number of pages	6
Journal	Journal of Applied Physics
Volume	95
Issue number	10
DOIs	https://doi.org/10.1063/1.1699491
State	Published - 15 May 2004
Externally published	Yes

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title = "Dielectric property-microstructure relationship for nanoporous silica based thin films",

abstract = "The correlation of microstructure and dielectric properties of different silica based thin films was studied. The Rutherford backscattering, x-ray reflectivity and ellipsometry measurements show that the spin-on deposition (SOD) films have a higher porosity than plasma enhanced chemical vapor deposition (PECVD) and chemical vapor deposition (CVD) films. The results show that the formation of air voids lowers the dielectric constant of the inhomogeneous two phase nanoporous silica based films deposited by SOD. It also show the existence of a homogeneous low density loose microstructure originating from a bonding nature in the PECVD/CVD films which leads to lowering of their dielectric constants to a small extent.",

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AU - Fisher, I.

AU - Kaplan, W. D.

AU - Eizenberg, M.

PY - 2004/5/15

Y1 - 2004/5/15

N2 - The correlation of microstructure and dielectric properties of different silica based thin films was studied. The Rutherford backscattering, x-ray reflectivity and ellipsometry measurements show that the spin-on deposition (SOD) films have a higher porosity than plasma enhanced chemical vapor deposition (PECVD) and chemical vapor deposition (CVD) films. The results show that the formation of air voids lowers the dielectric constant of the inhomogeneous two phase nanoporous silica based films deposited by SOD. It also show the existence of a homogeneous low density loose microstructure originating from a bonding nature in the PECVD/CVD films which leads to lowering of their dielectric constants to a small extent.

AB - The correlation of microstructure and dielectric properties of different silica based thin films was studied. The Rutherford backscattering, x-ray reflectivity and ellipsometry measurements show that the spin-on deposition (SOD) films have a higher porosity than plasma enhanced chemical vapor deposition (PECVD) and chemical vapor deposition (CVD) films. The results show that the formation of air voids lowers the dielectric constant of the inhomogeneous two phase nanoporous silica based films deposited by SOD. It also show the existence of a homogeneous low density loose microstructure originating from a bonding nature in the PECVD/CVD films which leads to lowering of their dielectric constants to a small extent.

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JO - Journal of Applied Physics

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Dielectric property-microstructure relationship for nanoporous silica based thin films

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