Density of Traps at the Insulator/III-N Interface of GaN Heterostructure Field-Effect Transistors Obtained by Gated Hall Measurements

Shlomo Mehari; Arkady Gavrilov; Moshe Eizenberg; Dan Ritter

doi:10.1109/LED.2015.2452211

Density of Traps at the Insulator/III-N Interface of GaN Heterostructure Field-Effect Transistors Obtained by Gated Hall Measurements

Shlomo Mehari, Arkady Gavrilov, Moshe Eizenberg, Dan Ritter

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We apply the gated Hall method to obtain the density of trap distribution, D_it (E), at the insulator/III-N interface of a heterostructure field effect transistor. It is shown that D_it is proportional to the difference between the steady-state and the high-frequency prediction of the gate-induced two-dimensional electron gas concentrations. The D_it profile at the SiN_x/GaN interface in the energy range of 1.2-2.3 eV below the GaN conduction band is obtained as a demonstration of the method.

Original language	English
Article number	7147810
Pages (from-to)	893-895
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	36
Issue number	9
DOIs	https://doi.org/10.1109/LED.2015.2452211
State	Published - 1 Sep 2015
Externally published	Yes

Keywords

AlGaN/GaN MIS-HEMT
Hall effect
density of interface states
electron trapping

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10.1109/LED.2015.2452211

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@article{5f7f28babf3f421094e3508283c50162,

title = "Density of Traps at the Insulator/III-N Interface of GaN Heterostructure Field-Effect Transistors Obtained by Gated Hall Measurements",

abstract = "We apply the gated Hall method to obtain the density of trap distribution, Dit (E), at the insulator/III-N interface of a heterostructure field effect transistor. It is shown that Dit is proportional to the difference between the steady-state and the high-frequency prediction of the gate-induced two-dimensional electron gas concentrations. The Dit profile at the SiNx/GaN interface in the energy range of 1.2-2.3 eV below the GaN conduction band is obtained as a demonstration of the method.",

keywords = "AlGaN/GaN MIS-HEMT, Hall effect, density of interface states, electron trapping",

author = "Shlomo Mehari and Arkady Gavrilov and Moshe Eizenberg and Dan Ritter",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2015",

month = sep,

day = "1",

doi = "10.1109/LED.2015.2452211",

language = "英语",

volume = "36",

pages = "893--895",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - Density of Traps at the Insulator/III-N Interface of GaN Heterostructure Field-Effect Transistors Obtained by Gated Hall Measurements

AU - Mehari, Shlomo

AU - Gavrilov, Arkady

AU - Eizenberg, Moshe

AU - Ritter, Dan

PY - 2015/9/1

Y1 - 2015/9/1

N2 - We apply the gated Hall method to obtain the density of trap distribution, Dit (E), at the insulator/III-N interface of a heterostructure field effect transistor. It is shown that Dit is proportional to the difference between the steady-state and the high-frequency prediction of the gate-induced two-dimensional electron gas concentrations. The Dit profile at the SiNx/GaN interface in the energy range of 1.2-2.3 eV below the GaN conduction band is obtained as a demonstration of the method.

AB - We apply the gated Hall method to obtain the density of trap distribution, Dit (E), at the insulator/III-N interface of a heterostructure field effect transistor. It is shown that Dit is proportional to the difference between the steady-state and the high-frequency prediction of the gate-induced two-dimensional electron gas concentrations. The Dit profile at the SiNx/GaN interface in the energy range of 1.2-2.3 eV below the GaN conduction band is obtained as a demonstration of the method.

KW - AlGaN/GaN MIS-HEMT

KW - Hall effect

KW - density of interface states

KW - electron trapping

UR - http://www.scopus.com/inward/record.url?scp=84940372489&partnerID=8YFLogxK

U2 - 10.1109/LED.2015.2452211

DO - 10.1109/LED.2015.2452211

M3 - 文章

AN - SCOPUS:84940372489

SN - 0741-3106

VL - 36

SP - 893

EP - 895

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

M1 - 7147810

ER -

Density of Traps at the Insulator/III-N Interface of GaN Heterostructure Field-Effect Transistors Obtained by Gated Hall Measurements

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Keywords

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