Density of Traps at the Insulator/III-N Interface of GaN Heterostructure Field-Effect Transistors Obtained by Gated Hall Measurements

Shlomo Mehari, Arkady Gavrilov, Moshe Eizenberg, Dan Ritter

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

We apply the gated Hall method to obtain the density of trap distribution, Dit (E), at the insulator/III-N interface of a heterostructure field effect transistor. It is shown that Dit is proportional to the difference between the steady-state and the high-frequency prediction of the gate-induced two-dimensional electron gas concentrations. The Dit profile at the SiNx/GaN interface in the energy range of 1.2-2.3 eV below the GaN conduction band is obtained as a demonstration of the method.

Original languageEnglish
Article number7147810
Pages (from-to)893-895
Number of pages3
JournalIEEE Electron Device Letters
Volume36
Issue number9
DOIs
StatePublished - 1 Sep 2015
Externally publishedYes

Keywords

  • AlGaN/GaN MIS-HEMT
  • density of interface states
  • electron trapping
  • Hall effect

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