Correlations between electrical properties and interfacial reactions for cobalt-germanium contacts to n-type GaAs

M. Genut; M. Eizenberg

doi:10.1063/1.99846

Correlations between electrical properties and interfacial reactions for cobalt-germanium contacts to n-type GaAs

M. Genut^*, M. Eizenberg

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Correlations between the electrical properties and interfacial reactions for the Co/GaAs, Co/Ge/GaAs, and Ge/Co/GaAs contact systems have been studied. Current-voltage and capacitance-voltage measurements show that for all three systems following heat treatments at temperatures not higher than 400°C, a rectifying contact was obtained. However, annealing in the temperature range of 450-600°C leads to an ohmic behavior; the lowest contact resistivity value (2.7×10^-4 Ω cm²) was obtained for Co/Ge/GaAs following heat treatment at 500°C. The electrical properties of the contacts are correlated with modifications in the structure and composition of the metallization interfacing the GaAs as determined by Auger electron spectroscopy, transmission electron microscopy, and x-ray diffraction.

Original language	English
Pages (from-to)	672-674
Number of pages	3
Journal	Applied Physics Letters
Volume	53
Issue number	8
DOIs	https://doi.org/10.1063/1.99846
State	Published - 1988
Externally published	Yes

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title = "Correlations between electrical properties and interfacial reactions for cobalt-germanium contacts to n-type GaAs",

abstract = "Correlations between the electrical properties and interfacial reactions for the Co/GaAs, Co/Ge/GaAs, and Ge/Co/GaAs contact systems have been studied. Current-voltage and capacitance-voltage measurements show that for all three systems following heat treatments at temperatures not higher than 400°C, a rectifying contact was obtained. However, annealing in the temperature range of 450-600°C leads to an ohmic behavior; the lowest contact resistivity value (2.7×10-4 Ω cm2) was obtained for Co/Ge/GaAs following heat treatment at 500°C. The electrical properties of the contacts are correlated with modifications in the structure and composition of the metallization interfacing the GaAs as determined by Auger electron spectroscopy, transmission electron microscopy, and x-ray diffraction.",

author = "M. Genut and M. Eizenberg",

year = "1988",

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T1 - Correlations between electrical properties and interfacial reactions for cobalt-germanium contacts to n-type GaAs

AU - Genut, M.

AU - Eizenberg, M.

PY - 1988

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N2 - Correlations between the electrical properties and interfacial reactions for the Co/GaAs, Co/Ge/GaAs, and Ge/Co/GaAs contact systems have been studied. Current-voltage and capacitance-voltage measurements show that for all three systems following heat treatments at temperatures not higher than 400°C, a rectifying contact was obtained. However, annealing in the temperature range of 450-600°C leads to an ohmic behavior; the lowest contact resistivity value (2.7×10-4 Ω cm2) was obtained for Co/Ge/GaAs following heat treatment at 500°C. The electrical properties of the contacts are correlated with modifications in the structure and composition of the metallization interfacing the GaAs as determined by Auger electron spectroscopy, transmission electron microscopy, and x-ray diffraction.

AB - Correlations between the electrical properties and interfacial reactions for the Co/GaAs, Co/Ge/GaAs, and Ge/Co/GaAs contact systems have been studied. Current-voltage and capacitance-voltage measurements show that for all three systems following heat treatments at temperatures not higher than 400°C, a rectifying contact was obtained. However, annealing in the temperature range of 450-600°C leads to an ohmic behavior; the lowest contact resistivity value (2.7×10-4 Ω cm2) was obtained for Co/Ge/GaAs following heat treatment at 500°C. The electrical properties of the contacts are correlated with modifications in the structure and composition of the metallization interfacing the GaAs as determined by Auger electron spectroscopy, transmission electron microscopy, and x-ray diffraction.

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