Correlation between Ga-O signature and midgap states at the Al 2O 3/In 0.53Ga 0.47As interface

Igor Krylov*, Arkady Gavrilov, Moshe Eizenberg, Dan Ritter

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

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Abstract

Al 2O 3/In 0.53Ga 0.47As gate stacks were fabricated using different concentrations of NH 4OH as a pre-deposition treatment. Increased NH 4OH concentrations significantly reduced the C-V weak inversion hump and the measured near midgap interface states density (D it). X-ray photoelectron spectroscopy (XPS) studies revealed that these changes in the electrical properties were accompanied by a reduction in the amount of the Ga-O bonding while As-As dimers as well as other XPS detected InGaAs surface species did not correlate with the observed D it trend. Possible explanations for these findings are suggested.

Original languageEnglish
Article number063504
JournalApplied Physics Letters
Volume101
Issue number6
DOIs
StatePublished - 6 Aug 2012
Externally publishedYes

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