Abstract
Al 2O 3/In 0.53Ga 0.47As gate stacks were fabricated using different concentrations of NH 4OH as a pre-deposition treatment. Increased NH 4OH concentrations significantly reduced the C-V weak inversion hump and the measured near midgap interface states density (D it). X-ray photoelectron spectroscopy (XPS) studies revealed that these changes in the electrical properties were accompanied by a reduction in the amount of the Ga-O bonding while As-As dimers as well as other XPS detected InGaAs surface species did not correlate with the observed D it trend. Possible explanations for these findings are suggested.
Original language | English |
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Article number | 063504 |
Journal | Applied Physics Letters |
Volume | 101 |
Issue number | 6 |
DOIs | |
State | Published - 6 Aug 2012 |
Externally published | Yes |