Copper-related degradation of SiO2 in metal-oxide-semiconductor capacitors subjected to bias thermal stress: Leakage of the minority charge carriers in the inversion layer

A. Kohn*, E. Lipp, M. Eizenberg, Y. Shacham-Diamand

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

A mechanism of Cu-related degradation of the SiO2 in metal-oxide-semiconductor capacitors subjected to bias thermal stress was described. It was predicted that commonly used BTS conditions could result in increased oxide conductivity, which was large enough to enable the leakage of minority carrier charge generated at the inversion layer. The influence of oxide conductivity on the measured current-voltage characteristic was also discussed. It was found that no-inversion layer (NIL) detection is an intermediate SiO2 degradation between the Cu+-related flat-band voltage shifts and decrease of breakdown voltage.

Original languageEnglish
Pages (from-to)627-629
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number4
DOIs
StatePublished - 26 Jul 2004
Externally publishedYes

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