Copper grain boundary diffusion in electroless deposited cobalt based films and its influence on diffusion barrier integrity for copper metallization

A. Kohn*, M. Eizenberg, Y. Shacham-Diamand

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

33 Scopus citations

Abstract

Copper grain boundary diffusion in electroless deposited cobalt based films and its influence on diffusion barrier integrity for copper metallization were investigated. The reduced diffusivity in the electroless deposited Co films resulted due to a reduction in the pre-exponential factor. Application of failure criterion to a 30 nm thick Co0.9P0.1 film was in good agreement with that of an electrical evaluation of MOS capacitors.

Original languageEnglish
Pages (from-to)3015-3024
Number of pages10
JournalJournal of Applied Physics
Volume94
Issue number5
DOIs
StatePublished - 1 Sep 2003
Externally publishedYes

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