Copper grain boundary diffusion in electroless deposited cobalt based films and its influence on diffusion barrier integrity for copper metallization

A. Kohn; M. Eizenberg; Y. Shacham-Diamand

doi:10.1063/1.1598635

Copper grain boundary diffusion in electroless deposited cobalt based films and its influence on diffusion barrier integrity for copper metallization

A. Kohn^*, M. Eizenberg, Y. Shacham-Diamand

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

35 Scopus citations

Abstract

Copper grain boundary diffusion in electroless deposited cobalt based films and its influence on diffusion barrier integrity for copper metallization were investigated. The reduced diffusivity in the electroless deposited Co films resulted due to a reduction in the pre-exponential factor. Application of failure criterion to a 30 nm thick Co_0.9P_0.1 film was in good agreement with that of an electrical evaluation of MOS capacitors.

Original language	English
Pages (from-to)	3015-3024
Number of pages	10
Journal	Journal of Applied Physics
Volume	94
Issue number	5
DOIs	https://doi.org/10.1063/1.1598635
State	Published - 1 Sep 2003
Externally published	Yes

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title = "Copper grain boundary diffusion in electroless deposited cobalt based films and its influence on diffusion barrier integrity for copper metallization",

abstract = "Copper grain boundary diffusion in electroless deposited cobalt based films and its influence on diffusion barrier integrity for copper metallization were investigated. The reduced diffusivity in the electroless deposited Co films resulted due to a reduction in the pre-exponential factor. Application of failure criterion to a 30 nm thick Co0.9P0.1 film was in good agreement with that of an electrical evaluation of MOS capacitors.",

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AU - Kohn, A.

AU - Eizenberg, M.

AU - Shacham-Diamand, Y.

PY - 2003/9/1

Y1 - 2003/9/1

N2 - Copper grain boundary diffusion in electroless deposited cobalt based films and its influence on diffusion barrier integrity for copper metallization were investigated. The reduced diffusivity in the electroless deposited Co films resulted due to a reduction in the pre-exponential factor. Application of failure criterion to a 30 nm thick Co0.9P0.1 film was in good agreement with that of an electrical evaluation of MOS capacitors.

AB - Copper grain boundary diffusion in electroless deposited cobalt based films and its influence on diffusion barrier integrity for copper metallization were investigated. The reduced diffusivity in the electroless deposited Co films resulted due to a reduction in the pre-exponential factor. Application of failure criterion to a 30 nm thick Co0.9P0.1 film was in good agreement with that of an electrical evaluation of MOS capacitors.

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U2 - 10.1063/1.1598635

DO - 10.1063/1.1598635

M3 - 文章

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SN - 0021-8979

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JO - Journal of Applied Physics

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IS - 5

ER -

Copper grain boundary diffusion in electroless deposited cobalt based films and its influence on diffusion barrier integrity for copper metallization

Abstract

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