Contact reaction of silicon and thin films of Ir-V alloys

M. Eizenberg*, R. Brener

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

The contact reaction between a silicon substrate and codeposited Ir-V alloy films of composition IrxV100-x where x is 25, 50 or 80 were studied. Interdiffusion and compound formation were analysed by Auger electron spectroscopy and X-ray diffraction. The expected formation of IrSi and Ir2Si3 at relatively low temperatures is prevented by the formation of stable Ir-V intermetallic compounds. Silicide formation is observed only after anneals at about 700°C, when VSi2, Ir2Si3 and tracks of IrSi are detected. This is accompanied by component redistribution in the thin films, the details of which depend on the alloy composition.

Original languageEnglish
Pages (from-to)355-360
Number of pages6
JournalThin Solid Films
Volume89
Issue number4
DOIs
StatePublished - 26 Mar 1982
Externally publishedYes

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