Compound formation at the interface between cobalt thin films and single-crystal GaAs

TY - JOUR

T1 - Compound formation at the interface between cobalt thin films and single-crystal GaAs

AU - Genut, M.

AU - Eizenberg, M.

PY - 1987

Y1 - 1987

N2 - Interfacial reactions between cobalt thin films and single-crystal GaAs substrates have been studied by means of Auger electron spectroscopy, transmission electron microscopy, and x-ray diffraction. The interaction starts at ∼325°C by the formation of a ternary phase, most probably Co 2GaAs, which grows highly oriented with respect to the (001) substrate, with a lattice mismatch of ∼-10%. The reaction kinetics has been studied and found to be diffusion controlled with an activation energy of 0.7±0.1 eV. Cobalt was determined as the dominant diffusion species. The oriented ternary phase co-exists with randomly oriented CoGa and CoAs at the temperature range of 325-500°C, while at higher temperatures only the binary compounds prevail.

AB - Interfacial reactions between cobalt thin films and single-crystal GaAs substrates have been studied by means of Auger electron spectroscopy, transmission electron microscopy, and x-ray diffraction. The interaction starts at ∼325°C by the formation of a ternary phase, most probably Co 2GaAs, which grows highly oriented with respect to the (001) substrate, with a lattice mismatch of ∼-10%. The reaction kinetics has been studied and found to be diffusion controlled with an activation energy of 0.7±0.1 eV. Cobalt was determined as the dominant diffusion species. The oriented ternary phase co-exists with randomly oriented CoGa and CoAs at the temperature range of 325-500°C, while at higher temperatures only the binary compounds prevail.

UR - http://www.scopus.com/inward/record.url?scp=0345475226&partnerID=8YFLogxK

U2 - 10.1063/1.97855

DO - 10.1063/1.97855

M3 - 文章

AN - SCOPUS:0345475226

SN - 0003-6951

VL - 50

SP - 1358

EP - 1360

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -