Compound formation at the interface between cobalt thin films and single-crystal GaAs

M. Genut*, M. Eizenberg

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

27 Scopus citations

Abstract

Interfacial reactions between cobalt thin films and single-crystal GaAs substrates have been studied by means of Auger electron spectroscopy, transmission electron microscopy, and x-ray diffraction. The interaction starts at ∼325°C by the formation of a ternary phase, most probably Co 2GaAs, which grows highly oriented with respect to the (001) substrate, with a lattice mismatch of ∼-10%. The reaction kinetics has been studied and found to be diffusion controlled with an activation energy of 0.7±0.1 eV. Cobalt was determined as the dominant diffusion species. The oriented ternary phase co-exists with randomly oriented CoGa and CoAs at the temperature range of 325-500°C, while at higher temperatures only the binary compounds prevail.

Original languageEnglish
Pages (from-to)1358-1360
Number of pages3
JournalApplied Physics Letters
Volume50
Issue number19
DOIs
StatePublished - 1987
Externally publishedYes

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