The interaction of thin Pd films deposited on strained layers of Si 1-xGex epitaxially grown on Si(100) was studied. The Ge concentration in the molecular beam epitaxy grown Si1-xGex films was x=0.16, and their thickness 2300 Å. A highly textured ternary compound (Pd2Si1-yGey) formed concurrently with the PdGe phase, at annealing temperatures between 200 and 550 °C. Above 500 °C, a region of Si1-xGex alloy with high Ge concentration formed between the fully reacted compound and the unreacted Si1-xGex layer.
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - 1991|