Compound formation at the interaction of Pd with strained layers of Si 1-xGex epitaxially grown on Si(100)

A. Buxbaum*, M. Eizenberg, A. Raizman, F. Schaffler

*Corresponding author for this work

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32 Scopus citations

Abstract

The interaction of thin Pd films deposited on strained layers of Si 1-xGex epitaxially grown on Si(100) was studied. The Ge concentration in the molecular beam epitaxy grown Si1-xGex films was x=0.16, and their thickness 2300 Å. A highly textured ternary compound (Pd2Si1-yGey) formed concurrently with the PdGe phase, at annealing temperatures between 200 and 550 °C. Above 500 °C, a region of Si1-xGex alloy with high Ge concentration formed between the fully reacted compound and the unreacted Si1-xGex layer.

Original languageEnglish
Pages (from-to)665-667
Number of pages3
JournalApplied Physics Letters
Volume59
Issue number6
DOIs
StatePublished - 1991
Externally publishedYes

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