Compositional dependence of work function and Fermi level position of the HfNx/SiO2 system

J. A. Rothschild; M. Eizenberg

doi:10.1016/j.mee.2009.03.008

Compositional dependence of work function and Fermi level position of the HfN_x/SiO₂ system

J. A. Rothschild^*, M. Eizenberg

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

In situ Kelvin Probe (KP) measurements performed on HfN_x showed an increase of the vacuum work function as a function of N content from a value of 3.9 eV (silicon conduction band edge) for pure Hf to a value of 5 eV (silicon valence band edge) for x ∼ 2. In contrast, capacitance-voltage (C-V) measurements showed that the effective work function increased only until x < 1 and saturated around a value of 4.6 eV (silicon midgap). This behavior is attributed to Fermi level pinning, which is probably due to oxidation of the HfN_x during the reactive sputtering deposition step.

Original language	English
Pages (from-to)	1771-1773
Number of pages	3
Journal	Microelectronic Engineering
Volume	86
Issue number	7-9
DOIs	https://doi.org/10.1016/j.mee.2009.03.008
State	Published - Jul 2009
Externally published	Yes

Keywords

Fermi level pinning
Metal/dielectric interfaces

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10.1016/j.mee.2009.03.008

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@article{adbcec615636495f9c6d006ac9ec2588,

title = "Compositional dependence of work function and Fermi level position of the HfNx/SiO2 system",

abstract = "In situ Kelvin Probe (KP) measurements performed on HfNx showed an increase of the vacuum work function as a function of N content from a value of 3.9 eV (silicon conduction band edge) for pure Hf to a value of 5 eV (silicon valence band edge) for x ∼ 2. In contrast, capacitance-voltage (C-V) measurements showed that the effective work function increased only until x < 1 and saturated around a value of 4.6 eV (silicon midgap). This behavior is attributed to Fermi level pinning, which is probably due to oxidation of the HfNx during the reactive sputtering deposition step.",

keywords = "Fermi level pinning, Metal/dielectric interfaces",

author = "Rothschild, {J. A.} and M. Eizenberg",

note = "Funding Information: We acknowledge the support of Intel Israel and the Russel Berrie Nanotechnology Institute at Technion. We thank Dr. R. Brenner and C. Cytermann from the Solid State Institute at Technion for XPS and ToF–SIMS measurements, Dr. A. Kellock from IBM (Almaden Labs) for RBS measurements, Dr. G. Frant from Materials Engineering Department at Technion for sputtering, Dr. Y. Kauffmann from Materials Engineering Department at Technion for the TEM service and Y. Moses for constructing the In situ KP measurement system.",

year = "2009",

month = jul,

doi = "10.1016/j.mee.2009.03.008",

language = "英语",

volume = "86",

pages = "1771--1773",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

number = "7-9",

}

TY - JOUR

T1 - Compositional dependence of work function and Fermi level position of the HfNx/SiO2 system

AU - Rothschild, J. A.

AU - Eizenberg, M.

N1 - Funding Information: We acknowledge the support of Intel Israel and the Russel Berrie Nanotechnology Institute at Technion. We thank Dr. R. Brenner and C. Cytermann from the Solid State Institute at Technion for XPS and ToF–SIMS measurements, Dr. A. Kellock from IBM (Almaden Labs) for RBS measurements, Dr. G. Frant from Materials Engineering Department at Technion for sputtering, Dr. Y. Kauffmann from Materials Engineering Department at Technion for the TEM service and Y. Moses for constructing the In situ KP measurement system.

PY - 2009/7

Y1 - 2009/7

N2 - In situ Kelvin Probe (KP) measurements performed on HfNx showed an increase of the vacuum work function as a function of N content from a value of 3.9 eV (silicon conduction band edge) for pure Hf to a value of 5 eV (silicon valence band edge) for x ∼ 2. In contrast, capacitance-voltage (C-V) measurements showed that the effective work function increased only until x < 1 and saturated around a value of 4.6 eV (silicon midgap). This behavior is attributed to Fermi level pinning, which is probably due to oxidation of the HfNx during the reactive sputtering deposition step.

AB - In situ Kelvin Probe (KP) measurements performed on HfNx showed an increase of the vacuum work function as a function of N content from a value of 3.9 eV (silicon conduction band edge) for pure Hf to a value of 5 eV (silicon valence band edge) for x ∼ 2. In contrast, capacitance-voltage (C-V) measurements showed that the effective work function increased only until x < 1 and saturated around a value of 4.6 eV (silicon midgap). This behavior is attributed to Fermi level pinning, which is probably due to oxidation of the HfNx during the reactive sputtering deposition step.

KW - Fermi level pinning

KW - Metal/dielectric interfaces

UR - http://www.scopus.com/inward/record.url?scp=67349132839&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2009.03.008

DO - 10.1016/j.mee.2009.03.008

M3 - 文章

AN - SCOPUS:67349132839

SN - 0167-9317

VL - 86

SP - 1771

EP - 1773

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 7-9

ER -

Compositional dependence of work function and Fermi level position of the HfN_x/SiO₂ system

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Keywords

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