Compositional dependence of work function and Fermi level position of the HfNx/SiO2 system

J. A. Rothschild*, M. Eizenberg

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

In situ Kelvin Probe (KP) measurements performed on HfNx showed an increase of the vacuum work function as a function of N content from a value of 3.9 eV (silicon conduction band edge) for pure Hf to a value of 5 eV (silicon valence band edge) for x ∼ 2. In contrast, capacitance-voltage (C-V) measurements showed that the effective work function increased only until x < 1 and saturated around a value of 4.6 eV (silicon midgap). This behavior is attributed to Fermi level pinning, which is probably due to oxidation of the HfNx during the reactive sputtering deposition step.

Original languageEnglish
Pages (from-to)1771-1773
Number of pages3
JournalMicroelectronic Engineering
Volume86
Issue number7-9
DOIs
StatePublished - Jul 2009
Externally publishedYes

Keywords

  • Fermi level pinning
  • Metal/dielectric interfaces

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