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Dive into the research topics of 'Comparison of simulation and measurement of gate leakage current in metal/Al2O3/GaN/AlGaN/AlN/GaN capacitors'. Together they form a unique fingerprint.- Sort by
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Shlomo Solomon Mehari*, Eilam Yalon, Arkady Gavrilov, David Mistele, Gad Bahir, Moshe Eizenberg, Dan Ritter
Research output: Contribution to journal › Article › peer-review