Comparison of simulation and measurement of gate leakage current in metal/Al2O3/GaN/AlGaN/AlN/GaN capacitors

Shlomo Solomon Mehari*, Eilam Yalon, Arkady Gavrilov, David Mistele, Gad Bahir, Moshe Eizenberg, Dan Ritter

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

We compare the simulations and measurements of gate leakage current in metal-insulator-semiconductor capacitors fabricated on standard AlGaN/GaN transistor layers. In the simulations, a fixed charge density at the interface between the Al2O3layer and the GaN cap layer was assumed for simplicity. The fixed charge layer (which depends on bias and device history) was obtained from capacitance-voltage measurements. The calculated tunneling current due to field emission from localized states in the GaN cap layer agreed with the experimental results. No additional leakage mechanisms had to be invoked.

Original languageEnglish
Article number6879476
Pages (from-to)3558-3561
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume61
Issue number10
DOIs
StatePublished - 1 Oct 2014
Externally publishedYes

Keywords

  • Capacitance-voltage (C-V) characteristics
  • electron traps
  • GaN
  • gate leakage
  • interface phenomena
  • leakage currents
  • metal-insulator-semiconductor (MIS) devices
  • quantum tunneling

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