Comparison of simulation and measurement of gate leakage current in metal/Al2O3/GaN/AlGaN/AlN/GaN capacitors

Shlomo Solomon Mehari; Eilam Yalon; Arkady Gavrilov; David Mistele; Gad Bahir; Moshe Eizenberg; Dan Ritter

doi:10.1109/TED.2014.2346461

Comparison of simulation and measurement of gate leakage current in metal/Al₂O₃/GaN/AlGaN/AlN/GaN capacitors

Shlomo Solomon Mehari^*, Eilam Yalon, Arkady Gavrilov, David Mistele, Gad Bahir, Moshe Eizenberg, Dan Ritter

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We compare the simulations and measurements of gate leakage current in metal-insulator-semiconductor capacitors fabricated on standard AlGaN/GaN transistor layers. In the simulations, a fixed charge density at the interface between the Al₂O₃layer and the GaN cap layer was assumed for simplicity. The fixed charge layer (which depends on bias and device history) was obtained from capacitance-voltage measurements. The calculated tunneling current due to field emission from localized states in the GaN cap layer agreed with the experimental results. No additional leakage mechanisms had to be invoked.

Original language	English
Article number	6879476
Pages (from-to)	3558-3561
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	61
Issue number	10
DOIs	https://doi.org/10.1109/TED.2014.2346461
State	Published - 1 Oct 2014
Externally published	Yes

Keywords

Capacitance-voltage (C-V) characteristics
GaN
electron traps
gate leakage
interface phenomena
leakage currents
metal-insulator-semiconductor (MIS) devices
quantum tunneling

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10.1109/TED.2014.2346461

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@article{905c7e24f7634e10a5ff9373126ab9b5,

title = "Comparison of simulation and measurement of gate leakage current in metal/Al2O3/GaN/AlGaN/AlN/GaN capacitors",

abstract = "We compare the simulations and measurements of gate leakage current in metal-insulator-semiconductor capacitors fabricated on standard AlGaN/GaN transistor layers. In the simulations, a fixed charge density at the interface between the Al2O3layer and the GaN cap layer was assumed for simplicity. The fixed charge layer (which depends on bias and device history) was obtained from capacitance-voltage measurements. The calculated tunneling current due to field emission from localized states in the GaN cap layer agreed with the experimental results. No additional leakage mechanisms had to be invoked.",

keywords = "Capacitance-voltage (C-V) characteristics, GaN, electron traps, gate leakage, interface phenomena, leakage currents, metal-insulator-semiconductor (MIS) devices, quantum tunneling",

author = "Mehari, {Shlomo Solomon} and Eilam Yalon and Arkady Gavrilov and David Mistele and Gad Bahir and Moshe Eizenberg and Dan Ritter",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.",

year = "2014",

month = oct,

day = "1",

doi = "10.1109/TED.2014.2346461",

language = "英语",

volume = "61",

pages = "3558--3561",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - Comparison of simulation and measurement of gate leakage current in metal/Al2O3/GaN/AlGaN/AlN/GaN capacitors

AU - Mehari, Shlomo Solomon

AU - Yalon, Eilam

AU - Gavrilov, Arkady

AU - Mistele, David

AU - Bahir, Gad

AU - Eizenberg, Moshe

AU - Ritter, Dan

PY - 2014/10/1

Y1 - 2014/10/1

N2 - We compare the simulations and measurements of gate leakage current in metal-insulator-semiconductor capacitors fabricated on standard AlGaN/GaN transistor layers. In the simulations, a fixed charge density at the interface between the Al2O3layer and the GaN cap layer was assumed for simplicity. The fixed charge layer (which depends on bias and device history) was obtained from capacitance-voltage measurements. The calculated tunneling current due to field emission from localized states in the GaN cap layer agreed with the experimental results. No additional leakage mechanisms had to be invoked.

AB - We compare the simulations and measurements of gate leakage current in metal-insulator-semiconductor capacitors fabricated on standard AlGaN/GaN transistor layers. In the simulations, a fixed charge density at the interface between the Al2O3layer and the GaN cap layer was assumed for simplicity. The fixed charge layer (which depends on bias and device history) was obtained from capacitance-voltage measurements. The calculated tunneling current due to field emission from localized states in the GaN cap layer agreed with the experimental results. No additional leakage mechanisms had to be invoked.

KW - Capacitance-voltage (C-V) characteristics

KW - GaN

KW - electron traps

KW - gate leakage

KW - interface phenomena

KW - leakage currents

KW - metal-insulator-semiconductor (MIS) devices

KW - quantum tunneling

UR - http://www.scopus.com/inward/record.url?scp=85027951646&partnerID=8YFLogxK

U2 - 10.1109/TED.2014.2346461

DO - 10.1109/TED.2014.2346461

M3 - 文章

AN - SCOPUS:85027951646

SN - 0018-9383

VL - 61

SP - 3558

EP - 3561

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 10

M1 - 6879476

ER -

Comparison of simulation and measurement of gate leakage current in metal/Al₂O₃/GaN/AlGaN/AlN/GaN capacitors

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Keywords

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