Co silicide formation on epitaxial Si1-yCy/Si (001) layers

Y. Roichman; A. Berner; R. Brener; C. Cytermann; D. Shilo; E. Zolotoyabko; M. Eizenberg; H. J. Osten

doi:10.1063/1.372341

Co silicide formation on epitaxial Si_1-yC_y/Si (001) layers

Y. Roichman, A. Berner, R. Brener, C. Cytermann, D. Shilo, E. Zolotoyabko, M. Eizenberg^*, H. J. Osten

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

We investigated the formation and structure of cobalt suicide (CoSi₂) on Si_1-yC_y. (0≤y ≤0.81%) layers grown by molecular beam epitaxy on Si (001). The incorporation of C in the Si lattice causes the following phenomena during silicidation: (i) the formation of CoSi₂ is delayed in temperature scale, as compared to pure Si; (ii) epitaxial CoSi₂ grains are formed at T≥600 °C; (iii) a two sublayer structure of CoSi₂ is observed, where the upper sublayer contains a very small amount of C and has a homogeneous microstructure, while the lower sublayer, which has a higher C concentration, contains randomly oriented CoSi₂ nanocrystallites; (iv) spatial inhomogeneity results in significant variation (within ±40%) in the CoSi₂ layer thickness; (v) no strain relaxation in the Si_1-yC_y layer during silicidation is detected up to 700 °C; and (vi) the distribution of carbon and boron in the semiconductor during silicidation is not changed significantly. The two latter findings show the potential of CoSi₂ on Si_1-yC_y for device application despite the mentioned inhomogeneity in CoSi₂ microstructure.

Original language	English
Pages (from-to)	3306-3312
Number of pages	7
Journal	Journal of Applied Physics
Volume	87
Issue number	7
DOIs	https://doi.org/10.1063/1.372341
State	Published - 1 Jan 2000
Externally published	Yes

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title = "Co silicide formation on epitaxial Si1-yCy/Si (001) layers",

abstract = "We investigated the formation and structure of cobalt suicide (CoSi2) on Si1-yCy. (0≤y ≤0.81%) layers grown by molecular beam epitaxy on Si (001). The incorporation of C in the Si lattice causes the following phenomena during silicidation: (i) the formation of CoSi2 is delayed in temperature scale, as compared to pure Si; (ii) epitaxial CoSi2 grains are formed at T≥600 °C; (iii) a two sublayer structure of CoSi2 is observed, where the upper sublayer contains a very small amount of C and has a homogeneous microstructure, while the lower sublayer, which has a higher C concentration, contains randomly oriented CoSi2 nanocrystallites; (iv) spatial inhomogeneity results in significant variation (within ±40%) in the CoSi2 layer thickness; (v) no strain relaxation in the Si1-yCy layer during silicidation is detected up to 700 °C; and (vi) the distribution of carbon and boron in the semiconductor during silicidation is not changed significantly. The two latter findings show the potential of CoSi2 on Si1-yCy for device application despite the mentioned inhomogeneity in CoSi2 microstructure.",

author = "Y. Roichman and A. Berner and R. Brener and C. Cytermann and D. Shilo and E. Zolotoyabko and M. Eizenberg and Osten, {H. J.}",

year = "2000",

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doi = "10.1063/1.372341",

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volume = "87",

pages = "3306--3312",

journal = "Journal of Applied Physics",

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T1 - Co silicide formation on epitaxial Si1-yCy/Si (001) layers

AU - Roichman, Y.

AU - Berner, A.

AU - Brener, R.

AU - Cytermann, C.

AU - Shilo, D.

AU - Zolotoyabko, E.

AU - Eizenberg, M.

AU - Osten, H. J.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - We investigated the formation and structure of cobalt suicide (CoSi2) on Si1-yCy. (0≤y ≤0.81%) layers grown by molecular beam epitaxy on Si (001). The incorporation of C in the Si lattice causes the following phenomena during silicidation: (i) the formation of CoSi2 is delayed in temperature scale, as compared to pure Si; (ii) epitaxial CoSi2 grains are formed at T≥600 °C; (iii) a two sublayer structure of CoSi2 is observed, where the upper sublayer contains a very small amount of C and has a homogeneous microstructure, while the lower sublayer, which has a higher C concentration, contains randomly oriented CoSi2 nanocrystallites; (iv) spatial inhomogeneity results in significant variation (within ±40%) in the CoSi2 layer thickness; (v) no strain relaxation in the Si1-yCy layer during silicidation is detected up to 700 °C; and (vi) the distribution of carbon and boron in the semiconductor during silicidation is not changed significantly. The two latter findings show the potential of CoSi2 on Si1-yCy for device application despite the mentioned inhomogeneity in CoSi2 microstructure.

AB - We investigated the formation and structure of cobalt suicide (CoSi2) on Si1-yCy. (0≤y ≤0.81%) layers grown by molecular beam epitaxy on Si (001). The incorporation of C in the Si lattice causes the following phenomena during silicidation: (i) the formation of CoSi2 is delayed in temperature scale, as compared to pure Si; (ii) epitaxial CoSi2 grains are formed at T≥600 °C; (iii) a two sublayer structure of CoSi2 is observed, where the upper sublayer contains a very small amount of C and has a homogeneous microstructure, while the lower sublayer, which has a higher C concentration, contains randomly oriented CoSi2 nanocrystallites; (iv) spatial inhomogeneity results in significant variation (within ±40%) in the CoSi2 layer thickness; (v) no strain relaxation in the Si1-yCy layer during silicidation is detected up to 700 °C; and (vi) the distribution of carbon and boron in the semiconductor during silicidation is not changed significantly. The two latter findings show the potential of CoSi2 on Si1-yCy for device application despite the mentioned inhomogeneity in CoSi2 microstructure.

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DO - 10.1063/1.372341

M3 - 文章

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SN - 0021-8979

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EP - 3312

JO - Journal of Applied Physics

JF - Journal of Applied Physics

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Co silicide formation on epitaxial Si_1-yC_y/Si (001) layers

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