TY - JOUR
T1 - Characterization of tungsten nucleation layers deposited using various SiH4 and WF6 flows
AU - Rana, V. V.S.
AU - Eizenberg, M.
AU - Ghanayem, S.
AU - Roberts, J.
AU - Sinha, A. K.
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 1994
Y1 - 1994
N2 - Chemical vapor deposition (CVD) of tungsten nucleation films is typically done using silane (SiH4) reduction of tungsten hexafluoride (WF6). For SiH4/WF6 flow ratios of ≤ 1, pure tungsten of bulk density and resistivity is deposited. Upon increasing the ratio to 2, nearly 40 at.% Si is incorporated in tungsten films. At a ratio of 3, hexagonal WSi2 is deposited, and at ratios of > 6 WSi2 along with silicon is deposited. A maximum in deposition rate is obtained for WSi2 at the ratio of 3, and the deposition rate drops as more silicon is being deposited. The step coverage of films drops dramatically as one moves away from pure W films. The deposition of these films takes place without any incubation time.
AB - Chemical vapor deposition (CVD) of tungsten nucleation films is typically done using silane (SiH4) reduction of tungsten hexafluoride (WF6). For SiH4/WF6 flow ratios of ≤ 1, pure tungsten of bulk density and resistivity is deposited. Upon increasing the ratio to 2, nearly 40 at.% Si is incorporated in tungsten films. At a ratio of 3, hexagonal WSi2 is deposited, and at ratios of > 6 WSi2 along with silicon is deposited. A maximum in deposition rate is obtained for WSi2 at the ratio of 3, and the deposition rate drops as more silicon is being deposited. The step coverage of films drops dramatically as one moves away from pure W films. The deposition of these films takes place without any incubation time.
UR - http://www.scopus.com/inward/record.url?scp=0028552649&partnerID=8YFLogxK
U2 - 10.1557/proc-337-569
DO - 10.1557/proc-337-569
M3 - 会议文章
AN - SCOPUS:0028552649
VL - 337
SP - 569
EP - 574
JO - Materials Research Society Symposium Proceedings
JF - Materials Research Society Symposium Proceedings
SN - 0272-9172
Y2 - 4 April 1994 through 8 April 1994
ER -