Characterization of tungsten nucleation layers deposited using various SiH4 and WF6 flows

V. V.S. Rana; M. Eizenberg; S. Ghanayem; J. Roberts; A. K. Sinha

doi:10.1557/proc-337-569

Characterization of tungsten nucleation layers deposited using various SiH₄ and WF₆ flows

V. V.S. Rana^*, M. Eizenberg, S. Ghanayem, J. Roberts, A. K. Sinha

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

Chemical vapor deposition (CVD) of tungsten nucleation films is typically done using silane (SiH₄) reduction of tungsten hexafluoride (WF₆). For SiH₄/WF₆ flow ratios of ≤ 1, pure tungsten of bulk density and resistivity is deposited. Upon increasing the ratio to 2, nearly 40 at.% Si is incorporated in tungsten films. At a ratio of 3, hexagonal WSi₂ is deposited, and at ratios of > 6 WSi₂ along with silicon is deposited. A maximum in deposition rate is obtained for WSi₂ at the ratio of 3, and the deposition rate drops as more silicon is being deposited. The step coverage of films drops dramatically as one moves away from pure W films. The deposition of these films takes place without any incubation time.

Original language	English
Pages (from-to)	569-574
Number of pages	6
Journal	Materials Research Society Symposium Proceedings
Volume	337
DOIs	https://doi.org/10.1557/proc-337-569
State	Published - 1994
Externally published	Yes
Event	Proceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA Duration: 4 Apr 1994 → 8 Apr 1994

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title = "Characterization of tungsten nucleation layers deposited using various SiH4 and WF6 flows",

abstract = "Chemical vapor deposition (CVD) of tungsten nucleation films is typically done using silane (SiH4) reduction of tungsten hexafluoride (WF6). For SiH4/WF6 flow ratios of ≤ 1, pure tungsten of bulk density and resistivity is deposited. Upon increasing the ratio to 2, nearly 40 at.% Si is incorporated in tungsten films. At a ratio of 3, hexagonal WSi2 is deposited, and at ratios of > 6 WSi2 along with silicon is deposited. A maximum in deposition rate is obtained for WSi2 at the ratio of 3, and the deposition rate drops as more silicon is being deposited. The step coverage of films drops dramatically as one moves away from pure W films. The deposition of these films takes place without any incubation time.",

author = "Rana, {V. V.S.} and M. Eizenberg and S. Ghanayem and J. Roberts and Sinha, {A. K.}",

year = "1994",

doi = "10.1557/proc-337-569",

language = "英语",

volume = "337",

pages = "569--574",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

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T1 - Characterization of tungsten nucleation layers deposited using various SiH4 and WF6 flows

AU - Rana, V. V.S.

AU - Eizenberg, M.

AU - Ghanayem, S.

AU - Roberts, J.

AU - Sinha, A. K.

PY - 1994

Y1 - 1994

N2 - Chemical vapor deposition (CVD) of tungsten nucleation films is typically done using silane (SiH4) reduction of tungsten hexafluoride (WF6). For SiH4/WF6 flow ratios of ≤ 1, pure tungsten of bulk density and resistivity is deposited. Upon increasing the ratio to 2, nearly 40 at.% Si is incorporated in tungsten films. At a ratio of 3, hexagonal WSi2 is deposited, and at ratios of > 6 WSi2 along with silicon is deposited. A maximum in deposition rate is obtained for WSi2 at the ratio of 3, and the deposition rate drops as more silicon is being deposited. The step coverage of films drops dramatically as one moves away from pure W films. The deposition of these films takes place without any incubation time.

AB - Chemical vapor deposition (CVD) of tungsten nucleation films is typically done using silane (SiH4) reduction of tungsten hexafluoride (WF6). For SiH4/WF6 flow ratios of ≤ 1, pure tungsten of bulk density and resistivity is deposited. Upon increasing the ratio to 2, nearly 40 at.% Si is incorporated in tungsten films. At a ratio of 3, hexagonal WSi2 is deposited, and at ratios of > 6 WSi2 along with silicon is deposited. A maximum in deposition rate is obtained for WSi2 at the ratio of 3, and the deposition rate drops as more silicon is being deposited. The step coverage of films drops dramatically as one moves away from pure W films. The deposition of these films takes place without any incubation time.

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DO - 10.1557/proc-337-569

M3 - 会议文章

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VL - 337

SP - 569

EP - 574

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

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Y2 - 4 April 1994 through 8 April 1994

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