Carrier-induced ferromagnetism in Ge(Mn,Fe) magnetic semiconductor thin-film structures

R. R. Gareev*, Yu V. Bugoslavsky, R. Schreiber, A. Paul, M. Sperl, M. Döppe

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

36 Scopus citations

Abstract

We report on the carrier-induced ferromagnetism in Ge(Mn,Fe) magnetic semiconductor insulating-type thin-film structures prepared using sequential deposition at Tg =520 K with subsequent annealing at Tg. In the resulting films Mn and Fe are diffused in the Ge matrix without compromising the epitaxial structure. The anomalous Hall effect serves as a manifestation of the carrier-induced magnetism, with p -type conductivity and the Curie temperature TC =209 K. The additional doping with Fe stabilizes epitaxial growth and carrier-mediated magnetism at levels of magnetic doping exceeding 10%. We conclude that indirect ferromagnetic exchange is mediated by localized holes with concentration n∼ 1020 cm-3 and mobility μ∼10 cm2 (V s).

Original languageEnglish
Article number222508
JournalApplied Physics Letters
Volume88
Issue number22
DOIs
StatePublished - 29 May 2006

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