Abstract
Sputter-deposited W-based contacts on p-GaN (NA∼10 18 cm-3) display non-ohmic behavior independent of annealing temperature when measured at 25°C. The transition to ohmic behavior occurs above ∼250°C as more of the acceptors become ionized. The optimum annealing temperature is ∼700°C under these conditions. These contacts are much more thermally stable than the conventional Ni/Au metallization, which shows a severely degraded morphology even at 700°C. W-based contacts may be ohmic as-deposited on very heavily doped n-GaN, and the specific contact resistance improves with annealing up to ∼900°C.
Original language | English |
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Pages (from-to) | 6d |
Journal | MRS Internet Journal of Nitride Semiconductor Research |
Volume | 4 |
Issue number | SUPPL. 1 |
DOIs | |
State | Published - 1999 |
Externally published | Yes |