Behavior of W and WSix contact metallization on n- and p- type GaN

X. A. Cao; F. Ren; J. R. Lothian; S. J. Pearton; C. R. Abernathy; J. C. Zolper; M. W. Cole; A. Zeitouny; M. Eizenberg; R. J. Shul

doi:10.1557/s1092578300003252

Behavior of W and WSi_x contact metallization on n- and p- type GaN

X. A. Cao^*, F. Ren, J. R. Lothian, S. J. Pearton, C. R. Abernathy, J. C. Zolper, M. W. Cole, A. Zeitouny, M. Eizenberg, R. J. Shul

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Sputter-deposited W-based contacts on p-GaN (N_A∼10 ¹⁸ cm^-3) display non-ohmic behavior independent of annealing temperature when measured at 25°C. The transition to ohmic behavior occurs above ∼250°C as more of the acceptors become ionized. The optimum annealing temperature is ∼700°C under these conditions. These contacts are much more thermally stable than the conventional Ni/Au metallization, which shows a severely degraded morphology even at 700°C. W-based contacts may be ohmic as-deposited on very heavily doped n-GaN, and the specific contact resistance improves with annealing up to ∼900°C.

Original language	English
Pages (from-to)	6d
Journal	MRS Internet Journal of Nitride Semiconductor Research
Volume	4
Issue number	SUPPL. 1
DOIs	https://doi.org/10.1557/s1092578300003252
State	Published - 1999
Externally published	Yes

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title = "Behavior of W and WSix contact metallization on n- and p- type GaN",

abstract = "Sputter-deposited W-based contacts on p-GaN (NA∼10 18 cm-3) display non-ohmic behavior independent of annealing temperature when measured at 25°C. The transition to ohmic behavior occurs above ∼250°C as more of the acceptors become ionized. The optimum annealing temperature is ∼700°C under these conditions. These contacts are much more thermally stable than the conventional Ni/Au metallization, which shows a severely degraded morphology even at 700°C. W-based contacts may be ohmic as-deposited on very heavily doped n-GaN, and the specific contact resistance improves with annealing up to ∼900°C.",

author = "Cao, {X. A.} and F. Ren and Lothian, {J. R.} and Pearton, {S. J.} and Abernathy, {C. R.} and Zolper, {J. C.} and Cole, {M. W.} and A. Zeitouny and M. Eizenberg and Shul, {R. J.}",

year = "1999",

doi = "10.1557/s1092578300003252",

language = "英语",

volume = "4",

pages = "6d",

journal = "MRS Internet Journal of Nitride Semiconductor Research",

issn = "1092-5783",

publisher = "Materials Research Society",

number = "SUPPL. 1",

}

TY - JOUR

T1 - Behavior of W and WSix contact metallization on n- and p- type GaN

AU - Cao, X. A.

AU - Ren, F.

AU - Lothian, J. R.

AU - Pearton, S. J.

AU - Abernathy, C. R.

AU - Zolper, J. C.

AU - Cole, M. W.

AU - Zeitouny, A.

AU - Eizenberg, M.

AU - Shul, R. J.

PY - 1999

Y1 - 1999

N2 - Sputter-deposited W-based contacts on p-GaN (NA∼10 18 cm-3) display non-ohmic behavior independent of annealing temperature when measured at 25°C. The transition to ohmic behavior occurs above ∼250°C as more of the acceptors become ionized. The optimum annealing temperature is ∼700°C under these conditions. These contacts are much more thermally stable than the conventional Ni/Au metallization, which shows a severely degraded morphology even at 700°C. W-based contacts may be ohmic as-deposited on very heavily doped n-GaN, and the specific contact resistance improves with annealing up to ∼900°C.

AB - Sputter-deposited W-based contacts on p-GaN (NA∼10 18 cm-3) display non-ohmic behavior independent of annealing temperature when measured at 25°C. The transition to ohmic behavior occurs above ∼250°C as more of the acceptors become ionized. The optimum annealing temperature is ∼700°C under these conditions. These contacts are much more thermally stable than the conventional Ni/Au metallization, which shows a severely degraded morphology even at 700°C. W-based contacts may be ohmic as-deposited on very heavily doped n-GaN, and the specific contact resistance improves with annealing up to ∼900°C.

UR - http://www.scopus.com/inward/record.url?scp=3442898854&partnerID=8YFLogxK

U2 - 10.1557/s1092578300003252

DO - 10.1557/s1092578300003252

M3 - 文章

AN - SCOPUS:3442898854

SN - 1092-5783

VL - 4

SP - 6d

JO - MRS Internet Journal of Nitride Semiconductor Research

JF - MRS Internet Journal of Nitride Semiconductor Research

IS - SUPPL. 1

ER -

Behavior of W and WSi_x contact metallization on n- and p- type GaN

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