Sputter-deposited W-based contacts on p-GaN (NA∼10 18 cm-3) display non-ohmic behavior independent of annealing temperature when measured at 25°C. The transition to ohmic behavior occurs above ∼250°C as more of the acceptors become ionized. The optimum annealing temperature is ∼700°C under these conditions. These contacts are much more thermally stable than the conventional Ni/Au metallization, which shows a severely degraded morphology even at 700°C. W-based contacts may be ohmic as-deposited on very heavily doped n-GaN, and the specific contact resistance improves with annealing up to ∼900°C.
|Journal||MRS Internet Journal of Nitride Semiconductor Research|
|Issue number||SUPPL. 1|
|State||Published - 1999|