Behavior of W and WSù contact metallization on n- And p- type GaN

X. A. Cao; F. Ren; J. R. Lothian; S. J. Pearton; C. R. Abemathy; J. C. Zolper; M. W. Cole; A. Zeitouny; M. Eizenberg; R. J. Shul

Behavior of W and WSù contact metallization on n- And p- type GaN

X. A. Cao^*, F. Ren, J. R. Lothian, S. J. Pearton, C. R. Abemathy, J. C. Zolper, M. W. Cole, A. Zeitouny, M. Eizenberg, R. J. Shul

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Sputter-deposited W-based contacts on p-GaN (NA-1018 cm"3) display non-ohmic behavior independent of annealing temperature when measured at 25 °C. The transition to ohmic behavior occurs above ~250 °C as more of the acceptors become ionized. The optimum annealing temperature is ~700 °C under these conditions. These contacts are much more thermally stable than the conventional Ni/Au metallization, which shows a severely degraded morphology even at 700 CC. W-based contacts may be ohmic as-deposited on very heavily doped n-GaN, and the specific contact resistance improves with annealing up to -900 °C.

Original language	English
Pages (from-to)	G6.39
Journal	Materials Research Society Symposium - Proceedings
Volume	537
State	Published - 1999
Externally published	Yes

Cite this

@article{0a818f90915545ffbefd37430eee5794,

title = "Behavior of W and WS{\`u} contact metallization on n- And p- type GaN",

abstract = "Sputter-deposited W-based contacts on p-GaN (NA-1018 cm{"}3) display non-ohmic behavior independent of annealing temperature when measured at 25 °C. The transition to ohmic behavior occurs above ~250 °C as more of the acceptors become ionized. The optimum annealing temperature is ~700 °C under these conditions. These contacts are much more thermally stable than the conventional Ni/Au metallization, which shows a severely degraded morphology even at 700 CC. W-based contacts may be ohmic as-deposited on very heavily doped n-GaN, and the specific contact resistance improves with annealing up to -900 °C.",

author = "Cao, {X. A.} and F. Ren and Lothian, {J. R.} and Pearton, {S. J.} and Abemathy, {C. R.} and Zolper, {J. C.} and Cole, {M. W.} and A. Zeitouny and M. Eizenberg and Shul, {R. J.}",

year = "1999",

language = "英语",

volume = "537",

pages = "G6.39",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

}

TY - JOUR

T1 - Behavior of W and WSù contact metallization on n- And p- type GaN

AU - Cao, X. A.

AU - Ren, F.

AU - Lothian, J. R.

AU - Pearton, S. J.

AU - Abemathy, C. R.

AU - Zolper, J. C.

AU - Cole, M. W.

AU - Zeitouny, A.

AU - Eizenberg, M.

AU - Shul, R. J.

PY - 1999

Y1 - 1999

N2 - Sputter-deposited W-based contacts on p-GaN (NA-1018 cm"3) display non-ohmic behavior independent of annealing temperature when measured at 25 °C. The transition to ohmic behavior occurs above ~250 °C as more of the acceptors become ionized. The optimum annealing temperature is ~700 °C under these conditions. These contacts are much more thermally stable than the conventional Ni/Au metallization, which shows a severely degraded morphology even at 700 CC. W-based contacts may be ohmic as-deposited on very heavily doped n-GaN, and the specific contact resistance improves with annealing up to -900 °C.

AB - Sputter-deposited W-based contacts on p-GaN (NA-1018 cm"3) display non-ohmic behavior independent of annealing temperature when measured at 25 °C. The transition to ohmic behavior occurs above ~250 °C as more of the acceptors become ionized. The optimum annealing temperature is ~700 °C under these conditions. These contacts are much more thermally stable than the conventional Ni/Au metallization, which shows a severely degraded morphology even at 700 CC. W-based contacts may be ohmic as-deposited on very heavily doped n-GaN, and the specific contact resistance improves with annealing up to -900 °C.

UR - http://www.scopus.com/inward/record.url?scp=0033357023&partnerID=8YFLogxK

M3 - 文章

AN - SCOPUS:0033357023

SN - 0272-9172

VL - 537

SP - G6.39

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

ER -

Behavior of W and WSù contact metallization on n- And p- type GaN

Abstract

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