Behavior of W and WSù contact metallization on n- And p- type GaN

X. A. Cao*, F. Ren, J. R. Lothian, S. J. Pearton, C. R. Abemathy, J. C. Zolper, M. W. Cole, A. Zeitouny, M. Eizenberg, R. J. Shul

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Sputter-deposited W-based contacts on p-GaN (NA-1018 cm"3) display non-ohmic behavior independent of annealing temperature when measured at 25 °C. The transition to ohmic behavior occurs above ~250 °C as more of the acceptors become ionized. The optimum annealing temperature is ~700 °C under these conditions. These contacts are much more thermally stable than the conventional Ni/Au metallization, which shows a severely degraded morphology even at 700 CC. W-based contacts may be ohmic as-deposited on very heavily doped n-GaN, and the specific contact resistance improves with annealing up to -900 °C.

Original languageEnglish
Pages (from-to)G6.39
JournalMaterials Research Society Symposium Proceedings
Volume537
StatePublished - 1999
Externally publishedYes

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