Abstract
Sputter-deposited W-based contacts on p-GaN (NA-1018 cm"3) display non-ohmic behavior independent of annealing temperature when measured at 25 °C. The transition to ohmic behavior occurs above ~250 °C as more of the acceptors become ionized. The optimum annealing temperature is ~700 °C under these conditions. These contacts are much more thermally stable than the conventional Ni/Au metallization, which shows a severely degraded morphology even at 700 CC. W-based contacts may be ohmic as-deposited on very heavily doped n-GaN, and the specific contact resistance improves with annealing up to -900 °C.
Original language | English |
---|---|
Pages (from-to) | G6.39 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 537 |
State | Published - 1999 |
Externally published | Yes |