Analysis of nonideal Schottky and p-n junction diodes - Extraction of parameters from I-V plots

M. Lyakas*, R. Zaharia, M. Eizenberg

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

47 Scopus citations

Abstract

We propose two novel methods of determining nonideal Schottky and p-n junction diodes parameters from I-V plots. The series resistance Rs, saturation current Is, as well as the bias-dependent ideality factor n(V), can be obtained from two successive I-V measurements - one solely of the diode and the other with an external resistance added in series with the measured diode. Our analysis confirms that the methods produce accurate and reliable results even when the conventional techniques fail, such as when we have strongly varying function n(V) in the presence of series resistance and an experimental noise.

Original languageEnglish
Pages (from-to)5481-5489
Number of pages9
JournalJournal of Applied Physics
Volume78
Issue number9
DOIs
StatePublished - 1995
Externally publishedYes

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