An in situ study of the dynamics of oxygen precipitation in si

A. Magerl, K. D. Liss, J. R. Schneider, W. Zulehner

Research output: Contribution to journalConference articlepeer-review

Abstract

The integrated intensity observed in a diffraction experiment on a large single crystal is directly related to it defect structure. We present the first in situ neutron and Γ ray measurements monitoring the dynamics of the build up and the annealing of strain fields at high temperatures at high temperatures due to the formation of SiO2 clusters and of associated secondary defects in Czochralski grown Si crystals.
Original languageEnglish
JournalAIP Conference Proceedings
DOIs
StatePublished - 1 Jan 1992
Externally publishedYes

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