All-Printed, Self-Aligned Carbon Nanotube Thin-Film Transistors on Imprinted Plastic Substrates

TY - JOUR

T1 - All-Printed, Self-Aligned Carbon Nanotube Thin-Film Transistors on Imprinted Plastic Substrates

AU - Song, Donghoon

AU - Zare Bidoky, Fazel

AU - Hyun, Woo Jin

AU - Walker, S. Brett

AU - Lewis, Jennifer A.

AU - Frisbie, C. Daniel

N1 - Publisher Copyright: © 2018 American Chemical Society.

PY - 2018/5/9

Y1 - 2018/5/9

N2 - We present a self-aligned process for printing thin-film transistors (TFTs) on plastic with single-walled carbon nanotube (SWCNT) networks as the channel material. The SCALE (self-aligned capillarity-assisted lithography for electronics) process combines imprint lithography with inkjet printing. Specifically, inks are jetted into imprinted reservoirs, where they then flow into narrow device cavities due to capillarity. Here, we incorporate a composite high-k gate dielectric and an aligned conducting polymer gate electrode in the SCALE process to enable a smaller areal footprint than prior designs that yields low-voltage SWCNT TFTs with average p-type carrier mobilities of 4 cm2/V·s and ON/OFF current ratios of 104. Our work demonstrates the promising potential of the SCALE process to fabricate SWCNT-based TFTs with favorable I-V characteristics on plastic substrates.

AB - We present a self-aligned process for printing thin-film transistors (TFTs) on plastic with single-walled carbon nanotube (SWCNT) networks as the channel material. The SCALE (self-aligned capillarity-assisted lithography for electronics) process combines imprint lithography with inkjet printing. Specifically, inks are jetted into imprinted reservoirs, where they then flow into narrow device cavities due to capillarity. Here, we incorporate a composite high-k gate dielectric and an aligned conducting polymer gate electrode in the SCALE process to enable a smaller areal footprint than prior designs that yields low-voltage SWCNT TFTs with average p-type carrier mobilities of 4 cm2/V·s and ON/OFF current ratios of 104. Our work demonstrates the promising potential of the SCALE process to fabricate SWCNT-based TFTs with favorable I-V characteristics on plastic substrates.

KW - BaTiO-based dielectric

KW - high-performance thin-film transistors

KW - imprinted substrate

KW - reservoirs/capillary channels

KW - self-aligned printing

KW - single-walled carbon nanotubes

UR - http://www.scopus.com/inward/record.url?scp=85046460187&partnerID=8YFLogxK

U2 - 10.1021/acsami.8b01581

DO - 10.1021/acsami.8b01581

M3 - 文章

C2 - 29683315

AN - SCOPUS:85046460187

SN - 1944-8244

VL - 10

SP - 15926

EP - 15932

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

IS - 18

ER -