Advanced composite high-κ gate stack for mixed anion arsenide-antimonide quantum well transistors

A. Ali*, H. Madan, R. Misra, E. Hwang, A. Agrawal, I. Ramirez, P. Schiffer, T. N. Jackson, S. E. Mohney, J. B. Boos, B. R. Bennett, I. Geppert, M. Eizenberg, S. Datta

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

8 Scopus citations

Abstract

This paper demonstrates the integration of a composite high-κ gate stack (3.3 nm Al2O3-1.0 nm GaSb) with a mixed anion InAs0.8Sb0.2 quantum-well field effect transistor (QWFET). The composite gate stack achieves; (i) EOT of 4.2 nm with <10 -7A/cm2 gate leakage (ii) low Dit interface (∼1x1012 /cm2/eV) (iii) high drift μ of 3,900-5,060 cm2/V-s at NS of 5×1011-3×10 12/cm2. The InAs0.8Sb0.2 MOS-QWFETs with composite gate stack exhibit extrinsic (intrinsic) gm of 334 (502) μS/μm and drive current of 380 μA/μm at VDS = 0.5V for Lg=1μm.

Original languageEnglish
Title of host publication2010 IEEE International Electron Devices Meeting, IEDM 2010
Pages6.3.1-6.3.4
DOIs
StatePublished - 2010
Externally publishedYes
Event2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States
Duration: 6 Dec 20108 Dec 2010

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2010 IEEE International Electron Devices Meeting, IEDM 2010
CountryUnited States
CitySan Francisco, CA
Period6/12/108/12/10

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