A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors

Igor Krylov; Boaz Pokroy; Moshe Eizenberg; Dan Ritter

doi:10.1063/1.4962855

A comparison between HfO₂/Al₂O₃ nano-laminates and ternary Hf_xAl_yO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors

Igor Krylov, Boaz Pokroy, Moshe Eizenberg, Dan Ritter

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

We compare the electrical properties of HfO₂/Al₂O₃ nano-laminates with those of the ternary Hf_xAl_yO compound in metal oxide semiconductor (MOS) capacitors. The dielectrics were deposited by atomic layer deposition on InGaAs. Water, ozone, and oxygen plasma were tested as oxygen precursors, and best results were obtained using water. The total dielectric thickness was kept constant in our experiments. It was found that the effective dielectric constant increased and the leakage current decreased with the number of periods. Best results were obtained for the ternary compound. The effect of the sublayer thicknesses on the electrical properties of the interface was carefully investigated, as well as the role of post-metallization annealing. Possible explanations for the observed trends are provided. We conclude that the ternary Hf_xAl_yO compound is more favorable than the nano-laminates approach for InGaAs based MOS transistor applications.

Original language	English
Article number	124505
Journal	Journal of Applied Physics
Volume	120
Issue number	12
DOIs	https://doi.org/10.1063/1.4962855
State	Published - 28 Sep 2016
Externally published	Yes

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title = "A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors",

abstract = "We compare the electrical properties of HfO2/Al2O3 nano-laminates with those of the ternary HfxAlyO compound in metal oxide semiconductor (MOS) capacitors. The dielectrics were deposited by atomic layer deposition on InGaAs. Water, ozone, and oxygen plasma were tested as oxygen precursors, and best results were obtained using water. The total dielectric thickness was kept constant in our experiments. It was found that the effective dielectric constant increased and the leakage current decreased with the number of periods. Best results were obtained for the ternary compound. The effect of the sublayer thicknesses on the electrical properties of the interface was carefully investigated, as well as the role of post-metallization annealing. Possible explanations for the observed trends are provided. We conclude that the ternary HfxAlyO compound is more favorable than the nano-laminates approach for InGaAs based MOS transistor applications.",

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AU - Krylov, Igor

AU - Pokroy, Boaz

AU - Eizenberg, Moshe

AU - Ritter, Dan

PY - 2016/9/28

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N2 - We compare the electrical properties of HfO2/Al2O3 nano-laminates with those of the ternary HfxAlyO compound in metal oxide semiconductor (MOS) capacitors. The dielectrics were deposited by atomic layer deposition on InGaAs. Water, ozone, and oxygen plasma were tested as oxygen precursors, and best results were obtained using water. The total dielectric thickness was kept constant in our experiments. It was found that the effective dielectric constant increased and the leakage current decreased with the number of periods. Best results were obtained for the ternary compound. The effect of the sublayer thicknesses on the electrical properties of the interface was carefully investigated, as well as the role of post-metallization annealing. Possible explanations for the observed trends are provided. We conclude that the ternary HfxAlyO compound is more favorable than the nano-laminates approach for InGaAs based MOS transistor applications.

AB - We compare the electrical properties of HfO2/Al2O3 nano-laminates with those of the ternary HfxAlyO compound in metal oxide semiconductor (MOS) capacitors. The dielectrics were deposited by atomic layer deposition on InGaAs. Water, ozone, and oxygen plasma were tested as oxygen precursors, and best results were obtained using water. The total dielectric thickness was kept constant in our experiments. It was found that the effective dielectric constant increased and the leakage current decreased with the number of periods. Best results were obtained for the ternary compound. The effect of the sublayer thicknesses on the electrical properties of the interface was carefully investigated, as well as the role of post-metallization annealing. Possible explanations for the observed trends are provided. We conclude that the ternary HfxAlyO compound is more favorable than the nano-laminates approach for InGaAs based MOS transistor applications.

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A comparison between HfO₂/Al₂O₃ nano-laminates and ternary Hf_xAl_yO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors

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