150 nm × 200 nm cross point hexagonal boron nitride based memristors with ultra-low currents in high resistive state

X. Liang; B. Yuan; Y. Shi; F. Palumbo; S. Chen; F. Hui; X. Jing; M. A. Villena; M. Lanza

doi:10.1109/EDTM.2019.8731155

150 nm × 200 nm cross point hexagonal boron nitride based memristors with ultra-low currents in high resistive state

X. Liang, B. Yuan, Y. Shi, F. Palumbo, S. Chen, F. Hui, X. Jing, M. A. Villena, M. Lanza^*

^*Corresponding author for this work

Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Here we show the fabrication of small-size cross point memristors using multilayer hexagonal boron nitride (h-BN) as switching layer. Excellent bipolar resistive switching (RS) with current ON/OFF ratios >1000 and low variability is demonstrated. The devices can also be operated in threshold RS mode, and the currents in high resistive state (HRS) are the lowest ever reported (10fA @0.1V), making possible their use as selector.

Original language	English
Title of host publication	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	258-260
Number of pages	3
ISBN (Electronic)	9781538665084
DOIs	https://doi.org/10.1109/EDTM.2019.8731155
State	Published - Mar 2019
Event	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore Duration: 12 Mar 2019 → 15 Mar 2019

Publication series

Name	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conference

Conference	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Country	Singapore
City	Singapore
Period	12/03/19 → 15/03/19

Access to Document

10.1109/EDTM.2019.8731155

Fingerprint Dive into the research topics of '150 nm × 200 nm cross point hexagonal boron nitride based memristors with ultra-low currents in high resistive state'. Together they form a unique fingerprint.

Cite this

Liang, X., Yuan, B., Shi, Y., Palumbo, F., Chen, S., Hui, F., Jing, X., Villena, M. A., & Lanza, M. (2019). 150 nm × 200 nm cross point hexagonal boron nitride based memristors with ultra-low currents in high resistive state. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 (pp. 258-260). [8731155] (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2019.8731155

Liang, X. ; Yuan, B. ; Shi, Y. ; Palumbo, F. ; Chen, S. ; Hui, F. ; Jing, X. ; Villena, M. A. ; Lanza, M. / 150 nm × 200 nm cross point hexagonal boron nitride based memristors with ultra-low currents in high resistive state. 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 258-260 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

@inproceedings{2eb5c37a6fb747f5a4a766331ed12942,

title = "150 nm × 200 nm cross point hexagonal boron nitride based memristors with ultra-low currents in high resistive state",

abstract = "Here we show the fabrication of small-size cross point memristors using multilayer hexagonal boron nitride (h-BN) as switching layer. Excellent bipolar resistive switching (RS) with current ON/OFF ratios >1000 and low variability is demonstrated. The devices can also be operated in threshold RS mode, and the currents in high resistive state (HRS) are the lowest ever reported (10fA @0.1V), making possible their use as selector.",

author = "X. Liang and B. Yuan and Y. Shi and F. Palumbo and S. Chen and F. Hui and X. Jing and Villena, {M. A.} and M. Lanza",

year = "2019",

month = mar,

doi = "10.1109/EDTM.2019.8731155",

language = "英语",

series = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "258--260",

booktitle = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",

address = "United States",

}

Liang, X, Yuan, B, Shi, Y, Palumbo, F, Chen, S, Hui, F, Jing, X, Villena, MA & Lanza, M 2019, 150 nm × 200 nm cross point hexagonal boron nitride based memristors with ultra-low currents in high resistive state. in 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019., 8731155, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Institute of Electrical and Electronics Engineers Inc., pp. 258-260, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Singapore, Singapore, 12/03/19. https://doi.org/10.1109/EDTM.2019.8731155

150 nm × 200 nm cross point hexagonal boron nitride based memristors with ultra-low currents in high resistive state. / Liang, X.; Yuan, B.; Shi, Y.; Palumbo, F.; Chen, S.; Hui, F.; Jing, X.; Villena, M. A.; Lanza, M.

2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 258-260 8731155 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - 150 nm × 200 nm cross point hexagonal boron nitride based memristors with ultra-low currents in high resistive state

AU - Liang, X.

AU - Yuan, B.

AU - Shi, Y.

AU - Palumbo, F.

AU - Chen, S.

AU - Hui, F.

AU - Jing, X.

AU - Villena, M. A.

AU - Lanza, M.

PY - 2019/3

Y1 - 2019/3

N2 - Here we show the fabrication of small-size cross point memristors using multilayer hexagonal boron nitride (h-BN) as switching layer. Excellent bipolar resistive switching (RS) with current ON/OFF ratios >1000 and low variability is demonstrated. The devices can also be operated in threshold RS mode, and the currents in high resistive state (HRS) are the lowest ever reported (10fA @0.1V), making possible their use as selector.

AB - Here we show the fabrication of small-size cross point memristors using multilayer hexagonal boron nitride (h-BN) as switching layer. Excellent bipolar resistive switching (RS) with current ON/OFF ratios >1000 and low variability is demonstrated. The devices can also be operated in threshold RS mode, and the currents in high resistive state (HRS) are the lowest ever reported (10fA @0.1V), making possible their use as selector.

UR - http://www.scopus.com/inward/record.url?scp=85067810611&partnerID=8YFLogxK

U2 - 10.1109/EDTM.2019.8731155

DO - 10.1109/EDTM.2019.8731155

M3 - 会议稿件

AN - SCOPUS:85067810611

T3 - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

SP - 258

EP - 260

BT - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 12 March 2019 through 15 March 2019

ER -

Liang X, Yuan B, Shi Y, Palumbo F, Chen S, Hui F et al. 150 nm × 200 nm cross point hexagonal boron nitride based memristors with ultra-low currents in high resistive state. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 258-260. 8731155. (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). https://doi.org/10.1109/EDTM.2019.8731155