@inproceedings{2eb5c37a6fb747f5a4a766331ed12942,
title = "150 nm × 200 nm cross point hexagonal boron nitride based memristors with ultra-low currents in high resistive state",
abstract = "Here we show the fabrication of small-size cross point memristors using multilayer hexagonal boron nitride (h-BN) as switching layer. Excellent bipolar resistive switching (RS) with current ON/OFF ratios >1000 and low variability is demonstrated. The devices can also be operated in threshold RS mode, and the currents in high resistive state (HRS) are the lowest ever reported (10fA @0.1V), making possible their use as selector.",
author = "X. Liang and B. Yuan and Y. Shi and F. Palumbo and S. Chen and F. Hui and X. Jing and Villena, {M. A.} and M. Lanza",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; null ; Conference date: 12-03-2019 Through 15-03-2019",
year = "2019",
month = mar,
doi = "10.1109/EDTM.2019.8731155",
language = "英语",
series = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "258--260",
booktitle = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",
address = "United States",
}