150 nm × 200 nm cross point hexagonal boron nitride based memristors with ultra-low currents in high resistive state

X. Liang, B. Yuan, Y. Shi, F. Palumbo, S. Chen, F. Hui, X. Jing, M. A. Villena, M. Lanza*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Here we show the fabrication of small-size cross point memristors using multilayer hexagonal boron nitride (h-BN) as switching layer. Excellent bipolar resistive switching (RS) with current ON/OFF ratios >1000 and low variability is demonstrated. The devices can also be operated in threshold RS mode, and the currents in high resistive state (HRS) are the lowest ever reported (10fA @0.1V), making possible their use as selector.

Original languageEnglish
Title of host publication2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages258-260
Number of pages3
ISBN (Electronic)9781538665084
DOIs
StatePublished - Mar 2019
Event2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore
Duration: 12 Mar 201915 Mar 2019

Publication series

Name2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conference

Conference2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
CountrySingapore
CitySingapore
Period12/03/1915/03/19

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