Moshe Eizenberg

Moshe Eizenberg

Professor

    Calculated based on number of publications stored in Pure and citations from Scopus
    1978 …2021

    Research activity per year

    Network

    I. Krylov

    • Technion-Israel Institute of Technology
    • TOWER Semiconductor Ltd.

    External person

    Dan Ritter

    • Technion-Israel Institute of Technology

    External person

    R. Brener

    • Technion-Israel Institute of Technology

    External person

    F. Palumbo

    • Universidad Tecnológica Nacional
    • Comisión Nacional de Energía Atómica
    • Consejo Nacional de Investigaciones Científicas y Técnicas
    • Technion-Israel Institute of Technology
    • CONICET/GAIANN-CAC-CNEA

    External person

    Pini Shekhter

    • Technion-Israel Institute of Technology

    External person

    R. Winter

    • Technion-Israel Institute of Technology

    External person

    Lior Kornblum

    • Technion-Israel Institute of Technology

    External person

    C. Cytermann

    • Technion-Israel Institute of Technology
    • Université Paris-Saclay

    External person

    F. Meyer

    • Université Paris-Sud
    • Université Paris-Saclay
    • Technion-Israel Institute of Technology
    • CNRS

    External person

    Arkady Gavrilov

    • Technion-Israel Institute of Technology

    External person

    J. W. Mayer

    • Cornell University
    • Arizona State University

    External person

    Y. Shacham-Diamand

    • Tel Aviv University
    • Cornell University

    External person

    A. K. Sinha

    • Applied Materials Incorporated
    • Applied Conductor Technology Division
    • Texas Instruments

    External person

    H. J. Osten

    • Leibniz University Hannover
    • Innovations for High Performance Microelectronics

    External person

    A. Kohn

    • Technion-Israel Institute of Technology
    • University of Oxford

    External person

    F. Edelman

    • Technion-Israel Institute of Technology
    • Jülich Research Centre

    External person

    F. Schäffler

    • Daimler AG
    • Technion-Israel Institute of Technology
    • Technion

    External person

    Sivan Fadida

    • Technion-Israel Institute of Technology

    External person

    E. Lipp

    • Technion-Israel Institute of Technology

    External person

    Kamira Weinfeld

    • Technion-Israel Institute of Technology

    External person

    R. Weil

    • Technion-Israel Institute of Technology

    External person

    W. Beyer

    • Jülich Research Centre

    External person

    Paul C. McIntyre

    • Stanford University
    • Stanford University

    External person

    Shlomo Mehari

    • Technion-Israel Institute of Technology

    External person

    S. Pazos

    • Universidad Tecnológica Nacional
    • Comisión Nacional de Energía Atómica
    • Consejo Nacional de Investigaciones Científicas y Técnicas
    • CONICET/GAIANN-CAC-CNEA

    External person

    J. A. Rothschild

    • Technion-Israel Institute of Technology

    External person

    C. Schwebel

    • Université Paris-Sud
    • Université Paris-Saclay
    • CNRS

    External person

    W. D. Kaplan

    • Technion-Israel Institute of Technology

    External person

    R. Mosely

    • Applied Materials Incorporated
    • Technion-Israel Institute of Technology

    External person

    A. Zeitouny

    • Technion-Israel Institute of Technology
    • University of Florida
    • University of Florida

    External person

    I. Geppert

    • Technion-Israel Institute of Technology

    External person

    S. J. Pearton

    • University of Florida
    • Office of Naval Research
    • University of Florida

    External person

    S. P. Murarka

    • Lucent
    • Rensselaer Polytechnic Institute
    • Nokia

    External person

    F. Aguirre

    • Universidad Tecnológica Nacional
    • Comisión Nacional de Energía Atómica
    • Consejo Nacional de Investigaciones Científicas y Técnicas
    • CONICET/GAIANN-CAC-CNEA
    • King Abdullah University of Science and Technology

    External person

    F. Ren

    • University of Florida
    • University of Florida

    External person

    M. Lyakas

    • Technion-Israel Institute of Technology

    External person

    Karl A. Littau

    • Applied Materials Incorporated
    • Texas Instruments

    External person

    Xianbin Xu

    • Technion-Israel Institute of Technology

    External person

    Yaron Kauffmann

    • Technion-Israel Institute of Technology

    External person

    Z. Atzmon

    • Technion-Israel Institute of Technology
    • Arizona State University

    External person

    Ganpati Ramanath

    • Rensselaer Polytechnic Institute

    External person

    A. Buxbaum

    • Technion-Israel Institute of Technology
    • The Solid State Institute
    • Technion

    External person

    R. Fastow

    • Technion-Israel Institute of Technology
    • Cornell University

    External person

    Valentina Korchnoy

    • Technion-Israel Institute of Technology

    External person

    Yoram Shapira

    • Tel Aviv University

    External person

    Ilanit Fisher

    • Lam Research Corporation
    • Technion-Israel Institute of Technology

    External person

    E. Zolotoyabko

    • Technion-Israel Institute of Technology

    External person

    R. J. Shul

    • Sandia National Laboratories
    • United States Army Research Laboratory

    External person

    R. Kröger

    • Technion-Israel Institute of Technology

    External person

    J. C. Zolper

    • Office of Naval Research
    • Technion-Israel Institute of Technology

    External person

    Zuoguang Liu

    • Yale University

    External person

    H. Strunk

    • Friedrich-Alexander University Erlangen-Nürnberg
    • Lehrst. Mikrocharakterisierung

    External person

    A. Appelbaum

    • Lucent
    • Technion-Israel Institute of Technology
    • Nokia

    External person

    T. P. Ma

    • Yale University

    External person

    Hagay Marom

    • Technion-Israel Institute of Technology

    External person

    A. Raizman

    • Soreq Nuclear Research Center
    • Technion-Israel Institute of Technology
    • Technion

    External person

    Sharon Cui

    • Yale University

    External person

    Yaron Amouyal

    • Technion-Israel Institute of Technology

    External person

    Kechao Tang

    • Stanford University
    • Soochow University
    • Stanford University

    External person

    X. A. Cao

    • University of Florida

    External person

    C. R. Abernathy

    • University of Florida
    • University of Florida

    External person

    Michal Danek

    • Lam Research Corporation
    • Applied Materials Incorporated

    External person

    M. W. Cole

    • United States Army Research Laboratory
    • Sandia National Laboratories

    External person

    M. Beregovsky

    • Technion-Israel Institute of Technology

    External person

    L. Chen

    • Applied Materials Incorporated

    External person

    D. D. Gandhi

    • Rensselaer Polytechnic Institute

    External person

    N. Mosleh

    • Université Paris-Sud
    • Université Paris-Saclay
    • CNRS

    External person

    M. Genut

    • Technion-Israel Institute of Technology

    External person

    Eilam Yalon

    • Technion-Israel Institute of Technology
    • Stanford University
    • Stanford University

    External person

    V. Demuth

    • Friedrich-Alexander University Erlangen-Nürnberg
    • Lehrst. Mikrocharakterisierung

    External person

    Jaesoo Ahn

    • Stanford University
    • Stanford University

    External person

    P. Gopal Ganesan

    • Technion-Israel Institute of Technology

    External person

    N. Ariel

    • Technion-Israel Institute of Technology

    External person

    Salvatore Lombardo

    • National Research Council of Italy

    External person

    A. Golan

    • Tel Aviv University
    • Technion-Israel Institute of Technology

    External person

    C. Pellet

    • Université Paris-Sud
    • CNRS
    • Université Paris-Saclay

    External person

    D. Cong

    • Applied Materials Incorporated

    External person

    A. Eyal

    • Université Paris-Saclay
    • Technion-Israel Institute of Technology
    • Université Paris-Sud
    • CNRS

    External person

    D. Schwendt

    • Leibniz University Hannover
    • Trinos Vakuum-Systeme GmbH

    External person

    V. Aubry-Fortuna

    • Université Paris-Sud
    • Université Paris-Saclay
    • CNRS

    External person

    Shoshana Tamir

    • Technion-Israel Institute of Technology
    • Israel Inst of Metals

    External person

    T. Guo

    • Technion-Israel Institute of Technology
    • Applied Materials Incorporated

    External person

    A. P. Singh

    • Rensselaer Polytechnic Institute

    External person

    S. Van Elshocht

    • Interuniversitair Micro-Elektronica Centrum

    External person

    J. R. Lothian

    • Multiplex Inc.
    • Lucent
    • Nokia

    External person

    Boaz Pokroy

    • Technion-Israel Institute of Technology

    External person

    L. Y. Chen

    • Applied Materials Incorporated

    External person

    J. Salzman

    • Microelectronics Research Center
    • Technion-Israel Institute of Technology

    External person

    C. Marcadal

    • Applied Materials Incorporated

    External person

    M. Chang

    • Applied Materials Incorporated
    • Applied Conductor Technology Division

    External person

    L. Nyns

    • Interuniversitair Micro-Elektronica Centrum

    External person

    Xiao Sun

    • Yale University

    External person

    M. Liao

    • Applied Materials Incorporated

    External person

    U. König

    • Daimler AG

    External person

    Y. Y. Wu

    • Harbin Institute of Technology
    • Technion-Israel Institute of Technology

    External person

    M. Glück

    • Daimler AG

    External person

    A. Berner

    • Technion-Israel Institute of Technology

    External person

    O. Chaix-Pluchery

    • Université Paris-Saclay
    • CNRS
    • Université Paris-Sud
    • Université Grenoble Alpes
    • ENSPG

    External person

    Yigal Komem

    • Technion-Israel Institute of Technology
    • Technion

    External person

    M. Barthula

    • Université Paris-Saclay
    • Université Paris-Sud
    • CNRS

    External person

    N. Yoshida

    • Applied Materials Incorporated

    External person

    Ekaterina Zoubenko

    • Technion-Israel Institute of Technology

    External person

    B. Meyler

    • Technion-Israel Institute of Technology

    External person

    J. Tseng

    • Applied Materials Incorporated

    External person

    D. Carl

    • Applied Materials Incorporated

    External person

    S. Cohen

    • Technion-Israel Institute of Technology

    External person

    I. Grimberg

    • Technion-Israel Institute of Technology

    External person

    A. Shriki

    • Technion-Israel Institute of Technology

    External person

    Jürgen Schubert

    • JARA
    • Jülich Research Centre

    External person

    B. Z. Weiss

    • Technion-Israel Institute of Technology

    External person

    Yonatan Calahorra

    • Technion-Israel Institute of Technology
    • University of Cambridge

    External person

    Wenqi Zhang

    • Nanjing University
    • Yale University

    External person

    J. Zahavi

    • Israel Inst of Metals
    • Technion-Israel Institute of Technology

    External person

    R. Beserman

    • Technion-Israel Institute of Technology

    External person

    Ulrike Tisch

    • Technion-Israel Institute of Technology

    External person

    A. Verdini

    • National Research Council of Italy
    • National Institute for Nuclear Physics

    External person

    H. Zhang

    • Applied Materials Incorporated

    External person

    Jie Yang

    • Yale University

    External person

    Y. Wang

    • Applied Materials Incorporated

    External person

    Cheng Yi Peng

    • National Taiwan University
    • Yale University

    External person

    R. Kalish

    • Technion-Israel Institute of Technology

    External person

    A. Stesmans

    • KU Leuven

    External person

    D. Parnis

    • Technion-Israel Institute of Technology

    External person

    E. Y. Tzou

    • Applied Materials Incorporated

    External person

    J. M. Blakely

    • Cornell University

    External person

    Oren Zonensain

    • Technion-Israel Institute of Technology

    External person

    R. H. Havemann

    • Applied Materials Incorporated
    • Texas Instruments

    External person

    Y. Miron

    • Technion-Israel Institute of Technology

    External person

    C. J. Palmstrøm

    • Cornell University

    External person

    S. Iacopetti

    • Technion-Israel Institute of Technology

    External person

    S. M. Donovan

    • University of Florida
    • University of Florida

    External person

    A. R. Chaudhuri

    • Leibniz University Hannover

    External person

    T. N. Jackson

    • Pennsylvania State University
    • IBM

    External person

    H. Kibbel

    • Daimler AG

    External person

    B. Fisher

    • Technion-Israel Institute of Technology

    External person

    Stella Q. Hong

    • Cornell University

    External person

    M. Czernohorsky

    • Leibniz University Hannover
    • Fraunhofer Institute for Photonic Microsystems

    External person

    N. A. Bojarczuk

    • IBM
    • Technion-Israel Institute of Technology

    External person

    K. Cohen Weinfeld

    • Technion-Israel Institute of Technology

    External person

    S. Datta

    • Pennsylvania State University
    • Pennsylvania State University

    External person

    J. Bregman

    • Tel Aviv University

    External person

    Hossam Haick

    • Technion-Israel Institute of Technology

    External person

    Matthew Kwan

    • Rensselaer Polytechnic Institute

    External person

    A. Mak

    • Applied Materials Incorporated

    External person

    A. Ali

    • Pennsylvania State University
    • Pennsylvania State University

    External person

    Girish A. Dixit

    • Applied Materials Incorporated
    • Texas Instruments

    External person

    S. Ramaswami

    • Applied Materials Incorporated

    External person

    S. G. Telford

    • Applied Materials Incorporated
    • Applied Conductor Technology Division

    External person

    L. Floreano

    • National Research Council of Italy
    • National Institute for Nuclear Physics

    External person

    Alex Yoon

    • Applied Materials Incorporated

    External person

    Y. Sverdlov

    • Tel Aviv University

    External person

    Yair Paska

    • Technion-Israel Institute of Technology

    External person

    P. Hubert Mutin

    • Institut Charles Gerhardt Montpellier
    • Université de Montpellier

    External person

    M. Avinun

    • Technion-Israel Institute of Technology

    External person

    T. Brat

    • Technion-Israel Institute of Technology

    External person

    Juwen Gao

    • Lam Research Corporation

    External person

    Y. Roichman

    • Technion-Israel Institute of Technology

    External person

    M. Levit

    • Technion-Israel Institute of Technology

    External person

    S. Yofis

    • Technion-Israel Institute of Technology

    External person

    I. Shalish

    • Tel Aviv University
    • Harvard University

    External person

    M. Naik

    • Technion-Israel Institute of Technology
    • Applied Materials Incorporated

    External person

    S. Ghanayem

    • Applied Materials Incorporated

    External person

    D. Saigal

    • Applied Materials Incorporated

    External person

    V. Richter

    • Technion-Israel Institute of Technology

    External person

    G. Gautherin

    • Université Paris-Sud
    • Université Paris-Saclay

    External person

    Cheryl Knepfler

    • Applied Materials Incorporated

    External person

    F. Cerbu

    • KU Leuven

    External person

    I. Kymissis

    • Columbia University

    External person

    Hermann Stoll

    • Max Planck Institute for Intelligent Systems

    External person

    Y. Shnieder

    • Technion-Israel Institute of Technology

    External person

    C. Dornfest

    • Applied Materials Incorporated

    External person

    S. Yehezkel

    • Technion-Israel Institute of Technology

    External person

    L. M. Ting

    • Texas Instruments

    External person

    O. Yam

    • Technion-Israel Institute of Technology

    External person

    Michael Yang

    • Applied Materials Incorporated

    External person

    G. Segal

    • Tel Aviv University

    External person

    M. Houssa

    • KU Leuven

    External person

    Timothy Weidman

    • Applied Materials Incorporated

    External person

    J. Greenblatt

    • Tadiran Ltd.

    External person

    L. Y. Chen

    • Applied Materials Incorporated

    External person

    M. Caymax

    • Interuniversitair Micro-Elektronica Centrum

    External person

    N. Barel

    • Technion-Israel Institute of Technology

    External person

    G. Ankonina

    • Technion-Israel Institute of Technology

    External person

    J. Mullin

    • TOWER Semiconductor Ltd.

    External person

    M. Avinum

    • Technion-Israel Institute of Technology

    External person

    Gopal Ganesan

    • Technion-Israel Institute of Technology
    • Department of Materials Engineering

    External person

    Hua Chung

    • Applied Materials Incorporated

    External person

    C. E.M. De Oliveira

    • Tel Aviv University

    External person

    K. S. Chang-Liao

    • National Tsing Hua University

    External person

    T. F. Wietler

    • Leibniz University Hannover

    External person

    J. Roberts

    • Applied Materials Incorporated

    External person

    Patrick Van Cleemput

    • Lam Research Corporation

    External person

    R. Misra

    • Pennsylvania State University

    External person

    Qi Zhong Hong

    • Texas Instruments

    External person

    W. Heinrich

    • Daimler AG

    External person

    V. V.S. Rana

    • Applied Materials Incorporated

    External person

    E. Hwang

    • Pennsylvania State University

    External person

    Ajit Paranjpe

    • Texas Instruments

    External person

    B. Singh

    • Rensselaer Polytechnic Institute

    External person

    R. Zaharia

    • Technion-Israel Institute of Technology

    External person

    J. Hersener

    • Daimler AG

    External person

    L. Kronik

    • Tel Aviv University

    External person

    Chao Wen

    • Soochow University

    External person

    J. D. Luttmer

    • Texas Instruments

    External person

    Iain Thayne

    • University of Glasgow

    External person

    H. Avraham

    • Technion-Israel Institute of Technology

    External person

    Z. Shahar

    • Technion-Israel Institute of Technology

    External person

    Manoj K. Jain

    • Applied Materials Incorporated

    External person

    Ryan Brock

    • Stanford University
    • Stanford University

    External person

    M. Zafrany

    • Technion-Israel Institute of Technology

    External person

    A. Fenigstein

    • TOWER Semiconductor Ltd.

    External person

    J. Han

    • Sandia National Laboratories

    External person

    Y. E. Gilboa

    • Technion-Israel Institute of Technology

    External person

    Moris Kori

    • Applied Materials Incorporated

    External person

    Y. Roizin

    • TOWER Semiconductor Ltd.

    External person

    J. B. Boos

    • Naval Research Laboratory

    External person

    S. Ghanavem

    • Applied Materials Incorporated

    External person

    Greg Harm

    • Lam Research Corporation

    External person

    S. Hung

    • Applied Materials Incorporated

    External person

    P. A. Heimann

    • Lucent
    • Nokia

    External person

    Shammai Speiser

    • Technion-Israel Institute of Technology

    External person

    P. Revesz

    • Cornell University

    External person

    Z. Shpilman

    • Technion-Israel Institute of Technology

    External person

    E. Ratner

    • Technion-Israel Institute of Technology

    External person

    Michael Nault

    • Applied Materials Incorporated

    External person

    U. Hörmann

    • Friedrich-Alexander University Erlangen-Nürnberg

    External person

    E. Lyakin

    • Technion-Israel Institute of Technology

    External person

    E. Rabkin

    • Technion-Israel Institute of Technology

    External person

    A. Agrawal

    • Pennsylvania State University

    External person

    Amy Zhang

    • Applied Materials Incorporated

    External person

    Robert Jackson

    • Applied Materials Incorporated

    External person

    Aleksandar Puzic

    • Max Planck Institute for Intelligent Systems
    • University of Stuttgart

    External person

    Hanns Ulrich Habermeier

    • Max Planck Institute for Solid State Research
    • Kunming University of Science and Technology
    • Inst. Adv. Mat. for Photoelectron.

    External person

    H. Tran

    • Applied Materials Incorporated

    External person

    A. Laha

    • Indian Institute of Technology Bombay

    External person

    P. M. Lenahan

    • Pennsylvania State University

    External person

    M. Ben-Tzur

    • Technion-Israel Institute of Technology

    External person

    Stefan Schulz

    • Chemnitz University of Technology

    External person

    H. Madan

    • Pennsylvania State University

    External person

    Al Morrison

    • Texas Instruments

    External person

    Yu Zhou

    • Rensselaer Polytechnic Institute

    External person

    S. E. Mohney

    • Pennsylvania State University

    External person

    Hongbin Fang

    • Applied Materials Incorporated

    External person

    G. Tremblay

    • Université Paris-Sud
    • Université Paris-Saclay

    External person

    D. V. Andreev

    • Bauman Moscow State Technical University
    • KU Leuven

    External person

    L. Burstein

    • Tel Aviv University

    External person

    Ravi Droopad

    • Texas State University

    External person

    S. Boyeras Baldomá

    • Universidad Tecnológica Nacional
    • Consejo Nacional de Investigaciones Científicas y Técnicas

    External person

    Aya Cohen

    • Technion-Israel Institute of Technology

    External person

    B. R. Bennett

    • Naval Research Laboratory

    External person

    Tom Mountsier

    • Lam Research Corporation

    External person

    Drew Paul

    • Texas Instruments

    External person

    M. Rösler

    • Daimler AG

    External person

    A. Schüppen

    • Daimler AG

    External person

    Cecile Uzan-Saguy

    • Technion-Israel Institute of Technology

    External person

    David J. Smith

    • Arizona State University

    External person

    W. Dorsch

    • Lehrst. Mikrocharakterisierung

    External person

    B. C. Bittel

    • Pennsylvania State University

    External person

    B. Israel

    • Tel Aviv University

    External person

    M. Lisiansky

    • TOWER Semiconductor Ltd.

    External person

    J. Owyang

    • Aviza Technology Inc.

    External person

    A. Fissel

    • Leibniz University Hannover

    External person

    S. Zhou

    • Applied Materials Incorporated

    External person

    Ming Feng Chang

    • National Yang Ming Chiao Tung University

    External person

    L. Breuil

    • Interuniversitair Micro-Elektronica Centrum

    External person

    Marika Gunji

    • Stanford University
    • Stanford University

    External person

    J. Strand

    • University College London

    External person

    O. Madia

    • KU Leuven

    External person

    V. Aubry-Fortuna

    • Université Paris-Sud
    • CNRS

    External person

    M. Efrati Fastow

    • Technion-Israel Institute of Technology

    External person

    A. Gladkikh

    • Tel Aviv University

    External person

    Saroj Nayak

    • Rensselaer Polytechnic Institute

    External person

    David Mistele

    • Technion-Israel Institute of Technology

    External person

    L. Bartholomew

    • Aviza Technology Inc.

    External person

    Y. Maeda

    • Applied Materials Incorporated

    External person

    Martin Holland

    • University of Glasgow

    External person

    E. Holzman

    • Technion-Israel Institute of Technology

    External person

    I. Levin

    • Technion-Israel Institute of Technology

    External person

    Y. Raskin

    • TOWER Semiconductor Ltd.

    External person

    I. Moskowitz

    • Technion-Israel Institute of Technology

    External person

    Reinhold H. Dauskardt

    • Stanford University
    • Stanford University

    External person

    Michael F. Chisholm

    • Applied Materials Incorporated

    External person

    F. Fortuna

    • Université Paris-Sud
    • Université Paris-Saclay

    External person

    Jeong Soo Byun

    • Applied Materials Incorporated

    External person

    Y. Le Meur

    • Université Paris-Sud
    • IBM
    • CNRS

    External person

    D. Bouchier

    • Université Paris-Sud
    • Université Paris-Saclay

    External person

    J. G. Lisoni

    • Interuniversitair Micro-Elektronica Centrum
    • Universidad Austral de Chile

    External person

    Yair Slovatizky

    • Technion-Israel Institute of Technology

    External person

    Robert Tang-Kong

    • Stanford University
    • Stanford University

    External person

    Liangliang Zhang

    • Stanford University
    • Stanford University

    External person

    P. Schiffer

    • Pennsylvania State University

    External person

    D. Cvetko

    • University of Ljubljana
    • National Research Council of Italy

    External person

    T. Arazi

    • Technion-Israel Institute of Technology

    External person

    E. Koltin

    • Technion-Israel Institute of Technology

    External person

    Yu L. Khait

    • Technion-Israel Institute of Technology

    External person

    M. Peisach

    • Weizmann Institute of Science

    External person

    M. Ritterband

    • Technion-Israel Institute of Technology

    External person

    J. A. Kittl

    • Samsung
    • KU Leuven

    External person

    S. Joseph

    • Technion-Israel Institute of Technology

    External person

    T. C.U. Tromm

    • Jülich Research Centre

    External person

    Santiago Boyeras

    • Universidad Tecnológica Nacional

    External person

    C. R. Abemathy

    • United States Army Research Laboratory

    External person

    A. Benhocine

    • Université Paris-Sud
    • Université Paris-Saclay

    External person

    Kaushik Chattopadhyay

    • Lam Research Corporation

    External person

    Ming Xi

    • Applied Materials Incorporated

    External person

    Gad Bahir

    • Technion-Israel Institute of Technology

    External person

    A. Heiman

    • TOWER Semiconductor Ltd.

    External person

    P. Möller

    • Université Paris-Sud
    • CNRS

    External person

    Jonathan Avner Rothschild

    • Technion-Israel Institute of Technology

    External person

    Anna Brusilovsky

    • Technion-Israel Institute of Technology

    External person

    J. O. Olowolafe

    • Obafemi Awolowo University

    External person

    A. G. Baca

    • Sandia National Laboratories

    External person

    D. Shilo

    • Technion-Israel Institute of Technology
    • Technion

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    M. Fastow

    • Technion-Israel Institute of Technology

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    I. Ramirez

    • Pennsylvania State University

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    Vitali Emelianov

    • Max Planck Institute for Intelligent Systems

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    • University College London
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    Jared Tracy

    • Stanford University
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    P. Warren

    • Swiss Federal Institute of Technology Lausanne

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