Physics & Astronomy
activation energy
25%
annealing
100%
atomic layer epitaxy
58%
Auger spectroscopy
40%
borders
20%
breakdown
21%
capacitance
34%
capacitors
51%
carbon
30%
characterization
24%
cobalt
31%
copper
50%
defects
21%
degradation
26%
electric contacts
65%
electric potential
31%
electrical measurement
33%
electrical properties
56%
electrical resistivity
50%
electron spectroscopy
39%
grain boundaries
20%
heat treatment
27%
implantation
22%
interactions
17%
ion beams
32%
ions
19%
leakage
21%
metal oxide semiconductors
90%
metals
50%
microstructure
17%
nucleation
21%
oxides
65%
oxygen
21%
passivity
20%
permittivity
18%
photoelectron spectroscopy
22%
semiconductor devices
35%
silicides
78%
silicon
33%
silicon dioxide
20%
temperature
40%
thermal stability
36%
thin films
60%
titanium nitrides
40%
transmission electron microscopy
35%
traps
33%
vapor deposition
47%
vapors
26%
x ray diffraction
39%
x rays
21%
Engineering & Materials Science
Activation energy
27%
Adhesion
21%
Aluminum oxide
51%
Amorphous carbon
24%
Annealing
88%
Atomic layer deposition
52%
Auger electron spectroscopy
26%
Chemical analysis
22%
Chemical vapor deposition
67%
Conduction bands
14%
Copper
44%
Defects
15%
Diffusion barriers
43%
Doping (additives)
17%
Electric potential
19%
Electric properties
19%
Electrons
22%
Epilayers
40%
Fermi level
24%
Heat treatment
21%
Heterojunctions
20%
Ion beams
30%
Ions
15%
Low-k dielectric
21%
Metallizing
77%
Metals
48%
Nucleation
30%
Ohmic contacts
24%
Oxide semiconductors
23%
Oxides
40%
Oxygen
18%
Plasmas
25%
Rapid thermal annealing
35%
Semiconductor materials
20%
Silicides
48%
Silicon
42%
Sputter deposition
20%
Strain relaxation
25%
Substrates
42%
Surface chemistry
18%
Temperature
49%
Thin films
36%
Titanium nitride
23%
Transistors
15%
Transmission electron microscopy
25%
Tungsten
19%
Two dimensional electron gas
17%
Vapors
26%
X ray diffraction
23%
X ray photoelectron spectroscopy
18%
Chemical Compounds
Adhesion Promoter
10%
Alloy
23%
Amorphous Material
19%
Annealing
64%
Application
11%
Atomic Layer Epitaxy
38%
Auger Electron Spectroscopy
27%
Band Offset
17%
Capacitor
14%
Carbon Atom
16%
Chemical Passivation
10%
Chemical Vapour Deposition
22%
Conduction Band
12%
Contact Resistance
11%
Dielectric Material
36%
Diffusion
12%
Diffusion Barrier
29%
Dioxygen
12%
Electrical Property
13%
Electron Particle
11%
Electron Trap
11%
Epitaxial Growth
9%
Fermi Level
13%
Field Effect
13%
Grain Boundary
16%
Heat Treatment
10%
Ion Beam
22%
Leakage Current
12%
Liquid Film
90%
Metal
19%
Metal Oxide
10%
Nitride
24%
Nucleation
23%
Oxide
22%
Plasma
16%
Rapid Thermal Annealing
25%
Reaction Activation Energy
17%
Reduction
9%
Resistance
11%
Semiconductor
23%
Sputter Deposition
18%
Strain
14%
Surface
15%
Surface Chemistry
15%
Transmission Electron Microscopy
16%
Tungsten
17%
Two-Dimensional Electron Gas
17%
Vacuum
16%
Voltage
11%
Work Function
23%