X ray photoelectron analysis of oxide-semiconductor interface after breakdown in Al2O3/InGaAs stacks

P. Shekhter; F. Palumbo; K. Cohen Weinfeld; M. Eizenberg

doi:10.1063/1.4895627

X ray photoelectron analysis of oxide-semiconductor interface after breakdown in Al₂O₃/InGaAs stacks

P. Shekhter^*, F. Palumbo, K. Cohen Weinfeld, M. Eizenberg

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

In this work, the post-breakdown characteristics of metal gate/Al₂O₃/InGaAs structures were studied using surface analysis by x ray photoelectron spectroscopy. The results show that for dielectric breakdown under positive bias, localized filaments consisting of oxidized substrate atoms (In, Ga and As) were formed, while following breakdown under negative bias, a decrease of oxidized substrate atoms was observed. Such differences in the microstructure at the oxide-semiconductor interface after breakdown for positive and negative voltages are explained by atomic diffusion of the contact atoms into the gate dielectric in the region of the breakdown spot by the current induced electro-migration effect. These findings show a major difference between Al₂O₃/InGaAs and SiO₂/Si interfaces, opening the way to a better understanding of the breakdown characteristics of III-V complementary-metal-oxide-semiconductor technology.

Original language	English
Article number	102908
Journal	Applied Physics Letters
Volume	105
Issue number	10
DOIs	https://doi.org/10.1063/1.4895627
State	Published - 8 Sep 2014
Externally published	Yes

Access to Document

10.1063/1.4895627

Cite this

@article{4c9ba050e0fd4c01944de1acac5b939c,

title = "X ray photoelectron analysis of oxide-semiconductor interface after breakdown in Al2O3/InGaAs stacks",

abstract = "In this work, the post-breakdown characteristics of metal gate/Al2O3/InGaAs structures were studied using surface analysis by x ray photoelectron spectroscopy. The results show that for dielectric breakdown under positive bias, localized filaments consisting of oxidized substrate atoms (In, Ga and As) were formed, while following breakdown under negative bias, a decrease of oxidized substrate atoms was observed. Such differences in the microstructure at the oxide-semiconductor interface after breakdown for positive and negative voltages are explained by atomic diffusion of the contact atoms into the gate dielectric in the region of the breakdown spot by the current induced electro-migration effect. These findings show a major difference between Al2O3/InGaAs and SiO2/Si interfaces, opening the way to a better understanding of the breakdown characteristics of III-V complementary-metal-oxide-semiconductor technology.",

author = "P. Shekhter and F. Palumbo and {Cohen Weinfeld}, K. and M. Eizenberg",

note = "Publisher Copyright: {\textcopyright} 2014 AIP Publishing LLC.",

year = "2014",

month = sep,

day = "8",

doi = "10.1063/1.4895627",

language = "英语",

volume = "105",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - X ray photoelectron analysis of oxide-semiconductor interface after breakdown in Al2O3/InGaAs stacks

AU - Shekhter, P.

AU - Palumbo, F.

AU - Cohen Weinfeld, K.

AU - Eizenberg, M.

PY - 2014/9/8

Y1 - 2014/9/8

N2 - In this work, the post-breakdown characteristics of metal gate/Al2O3/InGaAs structures were studied using surface analysis by x ray photoelectron spectroscopy. The results show that for dielectric breakdown under positive bias, localized filaments consisting of oxidized substrate atoms (In, Ga and As) were formed, while following breakdown under negative bias, a decrease of oxidized substrate atoms was observed. Such differences in the microstructure at the oxide-semiconductor interface after breakdown for positive and negative voltages are explained by atomic diffusion of the contact atoms into the gate dielectric in the region of the breakdown spot by the current induced electro-migration effect. These findings show a major difference between Al2O3/InGaAs and SiO2/Si interfaces, opening the way to a better understanding of the breakdown characteristics of III-V complementary-metal-oxide-semiconductor technology.

AB - In this work, the post-breakdown characteristics of metal gate/Al2O3/InGaAs structures were studied using surface analysis by x ray photoelectron spectroscopy. The results show that for dielectric breakdown under positive bias, localized filaments consisting of oxidized substrate atoms (In, Ga and As) were formed, while following breakdown under negative bias, a decrease of oxidized substrate atoms was observed. Such differences in the microstructure at the oxide-semiconductor interface after breakdown for positive and negative voltages are explained by atomic diffusion of the contact atoms into the gate dielectric in the region of the breakdown spot by the current induced electro-migration effect. These findings show a major difference between Al2O3/InGaAs and SiO2/Si interfaces, opening the way to a better understanding of the breakdown characteristics of III-V complementary-metal-oxide-semiconductor technology.

UR - http://www.scopus.com/inward/record.url?scp=84907092665&partnerID=8YFLogxK

U2 - 10.1063/1.4895627

DO - 10.1063/1.4895627

M3 - 文章

AN - SCOPUS:84907092665

SN - 0003-6951

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 102908

ER -

X ray photoelectron analysis of oxide-semiconductor interface after breakdown in Al₂O₃/InGaAs stacks

Abstract

Access to Document

Other files and links

Fingerprint

Cite this