TY - JOUR
T1 - The interface of fluorinated amorphous carbon with copper metallization
AU - Ariel, N.
AU - Eizenberg, M.
AU - Wang, Y.
AU - Bakhru, H.
N1 - Funding Information:
Dr R. Brener and C. Cytermann are acknowledged for Auger/SIMS measurements, Dr L. Burstein for XPS measurements. The help of Professor S. Murarka (RPI, Troy) is very much appreciated. Israel–US Binational Science Foundation (BSF) and Applied Materials Inc. are acknowledged for financial support.
PY - 2001/4/15
Y1 - 2001/4/15
N2 - We have studied fluorinated amorphous carbon (a-F:C) films, prepared by High Density Plasma Chemical Vapor Deposition (HDP-CVD) methods from CH4 and C4F8, as candidates for low-κ inter metal dielectric (IMD) applications. In order to enhance the film's adhesion to the adjacent layers, an adhesion promoter layer was introduced. The samples used for the current research consist of a metal layer (Cu or its diffusion barriers Ta or TaN) and the a-F:C film, with the adhesion promoter sandwiched in between. In order to learn about the film and interfaces stability the samples were annealed at 400 and 500°C for 30 min. Up to 400°C, no metal diffusion into the adhesion promoter was observed. After 30 min of 500°C annealing, no Cu outdiffusion was observed by XPS nor was a change in the Cu2p transition peak's form suggesting that no serious chemical reaction has occurred at the interface. No major Cu diffusion was detected by RBS but SIMS measurements have showed Cu diffusion into the adhesion promoter after 500°C annealing, 30 min. The dielectric constant of the film is ∼2.7 (measured by C-V at 1 MHz) after 400°C annealing and much higher after 500°C annealing. The results obtained so far show that the integration of a-F:C as IMD is possible but there are some problems to be solved.
AB - We have studied fluorinated amorphous carbon (a-F:C) films, prepared by High Density Plasma Chemical Vapor Deposition (HDP-CVD) methods from CH4 and C4F8, as candidates for low-κ inter metal dielectric (IMD) applications. In order to enhance the film's adhesion to the adjacent layers, an adhesion promoter layer was introduced. The samples used for the current research consist of a metal layer (Cu or its diffusion barriers Ta or TaN) and the a-F:C film, with the adhesion promoter sandwiched in between. In order to learn about the film and interfaces stability the samples were annealed at 400 and 500°C for 30 min. Up to 400°C, no metal diffusion into the adhesion promoter was observed. After 30 min of 500°C annealing, no Cu outdiffusion was observed by XPS nor was a change in the Cu2p transition peak's form suggesting that no serious chemical reaction has occurred at the interface. No major Cu diffusion was detected by RBS but SIMS measurements have showed Cu diffusion into the adhesion promoter after 500°C annealing, 30 min. The dielectric constant of the film is ∼2.7 (measured by C-V at 1 MHz) after 400°C annealing and much higher after 500°C annealing. The results obtained so far show that the integration of a-F:C as IMD is possible but there are some problems to be solved.
KW - Copper metallization
KW - Fluorinated amorphous carbon
KW - HDP-CVD
UR - http://www.scopus.com/inward/record.url?scp=0035871478&partnerID=8YFLogxK
U2 - 10.1016/S0921-5093(00)01349-6
DO - 10.1016/S0921-5093(00)01349-6
M3 - 文章
AN - SCOPUS:0035871478
SN - 0921-5093
VL - 302
SP - 26
EP - 30
JO - Materials Science and Engineering: A
JF - Materials Science and Engineering: A
IS - 1
ER -