Sub-3 V ZnO Electrolyte-Gated Transistors and Circuits with Screen-Printed and Photo-Crosslinked Ion Gel Gate Dielectrics: New Routes to Improved Performance

TY - JOUR

T1 - Sub-3 V ZnO Electrolyte-Gated Transistors and Circuits with Screen-Printed and Photo-Crosslinked Ion Gel Gate Dielectrics

T2 - New Routes to Improved Performance

AU - Zare Bidoky, Fazel

AU - Tang, Boxin

AU - Ma, Rui

AU - Jochem, Krystopher S.

AU - Hyun, Woo Jin

AU - Song, Donghoon

AU - Koester, Steven J.

AU - Lodge, Timothy P.

AU - Frisbie, C. Daniel

N1 - Publisher Copyright: © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

PY - 2020/5/1

Y1 - 2020/5/1

N2 - A facile, high-resolution patterning process is introduced for fabrication of electrolyte-gated transistors (EGTs) and circuits using a photo-crosslinkable ion gel and stencil-based screen printing. The photo-crosslinkable gel is based on a triblock copolymer incorporating UV-sensitive terminal azide functionality and a common ionic liquid. Using this material in conjunction with conventional photolithography and stenciling techniques, well-defined 0.5–1 μm thick ion gel films are patterned on semiconductor channels as narrow as 10 μm. The resulting n-type ZnO EGTs display high electron mobility (>2 cm2 Vs−1) and on/off current ratios (>105). Further, EGT-based inverters exhibit static gains >23 at supply voltages below 3 V, and five-stage EGT ring oscillator circuits display dynamic propagation delays of 50 μs per stage. In general, the screen printing and photo-crosslinking strategy provides a clean room-compatible method to fabricate EGT circuits with improved sensitivity (gain) and computational power (gain × oscillating frequency). Detailed device analysis indicates that significantly shorter delay times, of order 1 μs, can be obtained by improving the ion gel conductance.

AB - A facile, high-resolution patterning process is introduced for fabrication of electrolyte-gated transistors (EGTs) and circuits using a photo-crosslinkable ion gel and stencil-based screen printing. The photo-crosslinkable gel is based on a triblock copolymer incorporating UV-sensitive terminal azide functionality and a common ionic liquid. Using this material in conjunction with conventional photolithography and stenciling techniques, well-defined 0.5–1 μm thick ion gel films are patterned on semiconductor channels as narrow as 10 μm. The resulting n-type ZnO EGTs display high electron mobility (>2 cm2 Vs−1) and on/off current ratios (>105). Further, EGT-based inverters exhibit static gains >23 at supply voltages below 3 V, and five-stage EGT ring oscillator circuits display dynamic propagation delays of 50 μs per stage. In general, the screen printing and photo-crosslinking strategy provides a clean room-compatible method to fabricate EGT circuits with improved sensitivity (gain) and computational power (gain × oscillating frequency). Detailed device analysis indicates that significantly shorter delay times, of order 1 μs, can be obtained by improving the ion gel conductance.

KW - electrolyte-gated transistors

KW - ion gels

KW - photo-patterning

KW - screen printing

KW - stencil

UR - http://www.scopus.com/inward/record.url?scp=85065653784&partnerID=8YFLogxK

U2 - 10.1002/adfm.201902028

DO - 10.1002/adfm.201902028

M3 - 文章

AN - SCOPUS:85065653784

SN - 1616-301X

VL - 30

JO - Advanced Functional Materials

JF - Advanced Functional Materials

IS - 20

M1 - 1902028

ER -