TY - GEN
T1 - Strong-field resonant dynamics in semiconductors
T2 - 2016 Conference on Lasers and Electro-Optics, CLEO 2016
AU - Wismer, Michael S.
AU - Kruchinin, Stanislav Yu
AU - Ciappina, Marcelo
AU - Stockman, Mark I.
AU - Yakovlev, Vladislav S.
N1 - Publisher Copyright:
© 2016 OSA.
PY - 2016/12/16
Y1 - 2016/12/16
N2 - We predict that a direct bandgap semiconductor (GaAs) resonantly excited by a strong ultrashort laser pulse exhibits a novel regime: kicked anharmonic Rabi oscillations (KARO). In this regime, Rabi oscillations are strongly coupled to intraband motion, and electron populations undergo very rapid changes when electrons pass near the Brillouin zone center. By the end of a laser pulse, these dynamics may form very asymmetric reciprocal-space population distributions, inducing thus a residual electric current controlled by the carrier-envelope phase.
AB - We predict that a direct bandgap semiconductor (GaAs) resonantly excited by a strong ultrashort laser pulse exhibits a novel regime: kicked anharmonic Rabi oscillations (KARO). In this regime, Rabi oscillations are strongly coupled to intraband motion, and electron populations undergo very rapid changes when electrons pass near the Brillouin zone center. By the end of a laser pulse, these dynamics may form very asymmetric reciprocal-space population distributions, inducing thus a residual electric current controlled by the carrier-envelope phase.
UR - http://www.scopus.com/inward/record.url?scp=85010672469&partnerID=8YFLogxK
U2 - 10.1364/cleo_at.2016.jth2a.24
DO - 10.1364/cleo_at.2016.jth2a.24
M3 - 会议稿件
AN - SCOPUS:85010672469
T3 - 2016 Conference on Lasers and Electro-Optics, CLEO 2016
BT - 2016 Conference on Lasers and Electro-Optics, CLEO 2016
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 5 June 2016 through 10 June 2016
ER -