Strain-induced effects on the dielectric constant for thin, crystalline rare earth oxides on silicon

D. Schwendt; H. J. Osten; P. Shekhter; M. Eizenberg

doi:10.1063/1.4727893

Strain-induced effects on the dielectric constant for thin, crystalline rare earth oxides on silicon

D. Schwendt^*, H. J. Osten, P. Shekhter, M. Eizenberg

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Thin epitaxial rare earth oxide layers on Si exhibit K values that are much larger than the known bulk values. We investigate the thickness dependence of that enhancement effect for epitaxial Gd ₂O ₃ on Si(111). Controlling the oxide composition in ternary (Gd _1-xNd _x) ₂O ₃ thin films enables us to tune the lattice mismatch to silicon and thus the K values of the dielectric layer from 13 (close to the bulk value) up to 20. We show that simple tetragonal distortion of the cubic lattice is not sufficient to explain the enhancement in K. Therefore, we propose more severe strain induced structural phase deformations.

Original language	English
Article number	232905
Journal	Applied Physics Letters
Volume	100
Issue number	23
DOIs	https://doi.org/10.1063/1.4727893
State	Published - 4 Jun 2012
Externally published	Yes

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@article{68b296333fe14ec394318d3668751d5d,

title = "Strain-induced effects on the dielectric constant for thin, crystalline rare earth oxides on silicon",

abstract = "Thin epitaxial rare earth oxide layers on Si exhibit K values that are much larger than the known bulk values. We investigate the thickness dependence of that enhancement effect for epitaxial Gd 2O 3 on Si(111). Controlling the oxide composition in ternary (Gd 1-xNd x) 2O 3 thin films enables us to tune the lattice mismatch to silicon and thus the K values of the dielectric layer from 13 (close to the bulk value) up to 20. We show that simple tetragonal distortion of the cubic lattice is not sufficient to explain the enhancement in K. Therefore, we propose more severe strain induced structural phase deformations.",

author = "D. Schwendt and Osten, {H. J.} and P. Shekhter and M. Eizenberg",

note = "Funding Information: We would like to thank E. Bugiel for the TEM investigations. The authors would like to acknowledge the partial support of the work by the Deutsche Forschungsgemeinschaft (DFG Project OS 112/5-1). This work was also partly supported by a grant from the German-Israel Foundation for Scientific Research and Development.",

year = "2012",

month = jun,

day = "4",

doi = "10.1063/1.4727893",

language = "英语",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "23",

}

TY - JOUR

T1 - Strain-induced effects on the dielectric constant for thin, crystalline rare earth oxides on silicon

AU - Schwendt, D.

AU - Osten, H. J.

AU - Shekhter, P.

AU - Eizenberg, M.

N1 - Funding Information: We would like to thank E. Bugiel for the TEM investigations. The authors would like to acknowledge the partial support of the work by the Deutsche Forschungsgemeinschaft (DFG Project OS 112/5-1). This work was also partly supported by a grant from the German-Israel Foundation for Scientific Research and Development.

PY - 2012/6/4

Y1 - 2012/6/4

N2 - Thin epitaxial rare earth oxide layers on Si exhibit K values that are much larger than the known bulk values. We investigate the thickness dependence of that enhancement effect for epitaxial Gd 2O 3 on Si(111). Controlling the oxide composition in ternary (Gd 1-xNd x) 2O 3 thin films enables us to tune the lattice mismatch to silicon and thus the K values of the dielectric layer from 13 (close to the bulk value) up to 20. We show that simple tetragonal distortion of the cubic lattice is not sufficient to explain the enhancement in K. Therefore, we propose more severe strain induced structural phase deformations.

AB - Thin epitaxial rare earth oxide layers on Si exhibit K values that are much larger than the known bulk values. We investigate the thickness dependence of that enhancement effect for epitaxial Gd 2O 3 on Si(111). Controlling the oxide composition in ternary (Gd 1-xNd x) 2O 3 thin films enables us to tune the lattice mismatch to silicon and thus the K values of the dielectric layer from 13 (close to the bulk value) up to 20. We show that simple tetragonal distortion of the cubic lattice is not sufficient to explain the enhancement in K. Therefore, we propose more severe strain induced structural phase deformations.

UR - http://www.scopus.com/inward/record.url?scp=84862125610&partnerID=8YFLogxK

U2 - 10.1063/1.4727893

DO - 10.1063/1.4727893

M3 - 文章

AN - SCOPUS:84862125610

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 232905

ER -

Strain-induced effects on the dielectric constant for thin, crystalline rare earth oxides on silicon

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