Solid state reactions of TaW thin films and Si single crystals

TY - JOUR

T1 - Solid state reactions of TaW thin films and Si single crystals

AU - Appelbaum, A.

AU - Eizenberg, M.

AU - Brener, R.

PY - 1983/4

Y1 - 1983/4

N2 - Contact reactions between a Si substrate and thin films of TaW bilayers and codeposited alloys have been studied. The interdiffusion and silicide formation have been analysed by Auger electron spectroscopy and X-ray diffraction. In the bilayer structures the formation of TaSi2 and WSi2 is observed at 700-750°C and 800-850°C, respectively. For the Ta-rich alloy of Ta80W20, TaSi2 is formed at 700-750°C similarly to the bilayer case, but this is followed by the formation of Ta5 Si3 which disappears at higher temperatures. For the W-rich alloy of Ta20W80, silicide formation is delayed to higher temperatures due to alloying in the thin film.

AB - Contact reactions between a Si substrate and thin films of TaW bilayers and codeposited alloys have been studied. The interdiffusion and silicide formation have been analysed by Auger electron spectroscopy and X-ray diffraction. In the bilayer structures the formation of TaSi2 and WSi2 is observed at 700-750°C and 800-850°C, respectively. For the Ta-rich alloy of Ta80W20, TaSi2 is formed at 700-750°C similarly to the bilayer case, but this is followed by the formation of Ta5 Si3 which disappears at higher temperatures. For the W-rich alloy of Ta20W80, silicide formation is delayed to higher temperatures due to alloying in the thin film.

UR - http://www.scopus.com/inward/record.url?scp=0020112134&partnerID=8YFLogxK

U2 - 10.1016/0042-207X(83)90060-X

DO - 10.1016/0042-207X(83)90060-X

M3 - 文章

AN - SCOPUS:0020112134

SN - 0042-207X

VL - 33

SP - 227

EP - 230

JO - Vacuum

JF - Vacuum

IS - 4

ER -